Effect of GaN Buffer Layer Growth Pressure on the Device Characteristics of AlGaN/GaN High-Electron-Mobility Transistors on Si

标题
Effect of GaN Buffer Layer Growth Pressure on the Device Characteristics of AlGaN/GaN High-Electron-Mobility Transistors on Si
作者
关键词
-
出版物
JAPANESE JOURNAL OF APPLIED PHYSICS
Volume 48, Issue 12, Pages 121002
出版商
Japan Society of Applied Physics
发表日期
2009-12-21
DOI
10.1143/jjap.48.121002

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