White light emission from ZnO/Zn0.9Mg0.1O heterostructures grown on si substrates

Light-emitting n-Zn0.9Mg0.1O/ZnO/p-Zn0.9Mg0.1O heterojunction structures were grown on single-crystal p-type Si(100) substrates using a simple process of ultrasonic spray pyrolysis. Aqueous solutions of zinc acetate, magnesium acetate, and ammonium acetate were used as the sources of Zn, Mg, and N, respectively. p-Type conductivity in the nitrogen-doped ZnO and Zn0.9Mg0.1O films has been observed. A distinct visible electroluminescence was observed at room temperature from the heterojunction structures under forward bias conditions.