4.7 Article

Effects of nanowire height on pool boiling performance of water on silicon chips

期刊

INTERNATIONAL JOURNAL OF THERMAL SCIENCES
卷 50, 期 11, 页码 2084-2090

出版社

ELSEVIER FRANCE-EDITIONS SCIENTIFIQUES MEDICALES ELSEVIER
DOI: 10.1016/j.ijthermalsci.2011.06.009

关键词

Nanowire; Pool boiling; Wettability; Direct growth

资金

  1. National Science Foundation [0802100]
  2. Directorate For Engineering
  3. Div Of Electrical, Commun & Cyber Sys [0802100] Funding Source: National Science Foundation

向作者/读者索取更多资源

A new technique is developed to directly grow Cu nanowire (CuNW) on Si substrate with electrochemical deposition to produce height-controlled hydrophilic nanowired surfaces for enhancing pool boiling performance. For broader heat transfer applications, CuNW and Si nanowires (SiNW) with various nanowire heights were fabricated and examined under pool boiling with water. The heat transfer performance of the samples with NW arrays is enhanced with increasing NW heights regardless of the NW materials. The surface with the tallest NW structure (35 mu m-tall SiNW) yielded a heat flux of 134 W/cm(2) at 23 K wall superheat, about 300% higher than a plain Si surface at the same wall superheat. (C) 2011 Elsevier Masson SAS. All rights reserved.

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