期刊
INTERNATIONAL JOURNAL OF NANOTECHNOLOGY
卷 5, 期 9-12, 页码 984-1017出版社
INDERSCIENCE ENTERPRISES LTD
DOI: 10.1504/IJNT.2008.019829
关键词
Si nanocrystals; luminescence; optoelectronic; Si laser; ion implantation; PECVD; PLD; superlattices; quantum confinement; interface states
Semiconductors, there is no manufacturable solution to address the increasing interconnection lengths in microelectronic devices. Optical interconnects are known to be a possible solution to this problem. The integration of optoelectronic components on an all Si matrix would considerably simplify the conception and fabrication of integrated optoelectronic devices and low-dimensional silicon could play a key role in this integration. Silicon nanocrystals embedded in a silicon oxide layer show many of the required properties such as intense luminescent emission, good wave-guiding properties and sufficient light amplification. The aim of this review is to state the motivation for research in nanophotonics and present the state-of-the-art of this emerging technology. We will pay particular attention to the Canadian contribution in the progress of the research towards the realisation of all-Si optoelectronics technology.
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