期刊
INTERNATIONAL JOURNAL OF HYDROGEN ENERGY
卷 37, 期 18, 页码 13638-13644出版社
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.ijhydene.2012.02.044
关键词
Chemical conversion; Photoelectrode; AgInSe2; Magnetron sputtering
资金
- National Science Council, Taiwan, R.O.C. [NSC 97-2221-E-182-041-MY3, NSC 100-2628-E-182-005-MY3]
AgInSe2 ternary semiconductor thin films are deposited on glass substrates and indium-doped-tin-oxide (ITO)-coated glass substrates using the selenization of magnetron sputtered Ag-In metal precursors. X-ray diffraction (XRD) and energy-dispersive analysis of X-ray (EDAX) results show that the crystal phase of samples changed from AgInSe2 to a solid mixture of AgInSe2 and Ag2Se with a decrease in the [In]/[In + Ag] molar ratio in samples. The direct and indirect energy band gaps of the samples vary in the ranges of 1.27-1.45 eV and 0.91-1.17 eV, respectively, depending on the [In]/[In + Ag] molar ratio in samples. The flat-band potentials of samples are in the range of -0.47 to -0.71 V (vs. normal hydrogen electrode) in a solution containing Na2S (0.35 M) + K2SO3 (0.25 M) obtained using Mott-Schottky measurements. The maximum photocurrent density of the samples on ITO-coated glass substrates is 31.7 mA/cm(2) at an external potential of +1.0 V (vs. Ag/AgCl) in the solution containing Na2S (0.35 M) + K2SO3 (0.25 M) ions. Crown Copyright (C) 2012, Hydrogen Energy Publications, LLC. Published by Elsevier Ltd. All rights reserved.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据