4.7 Article

Neutron Diffraction, Electronic Band Structure, and Electrical Resistivity of Mo3-xRuxSb7

期刊

INORGANIC CHEMISTRY
卷 48, 期 12, 页码 5216-5223

出版社

AMER CHEMICAL SOC
DOI: 10.1021/ic900171u

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资金

  1. DGA (Delegation Generale pour l'Armement, Ministry of Defense, France)
  2. European Network of Excellence CMA (Complex Metallic Alloys)
  3. Polish Ministry of Science and Higher Education [N202-2104-33]

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Neutron diffraction experiments and Korringa-Kohn-Rostoker with coherent potential approximation electronic band structure calculations as well as electrical resistivity measurements have been performed on polycrystalline Mo3-xRuxSb7 samples for 0 <= x <= 1. Neutron diffraction studies have been undertaken at room temperature and extended down to 4 K to get a better understanding of the crystalline structure modifications as the Ru content increases. Both structural and chemical characterizations have unambiguously revealed a solubility limit of the Ru atoms close to 0.8. Electronic band structure calculations have provided theoretical evidence of a progressive transition from a metalliclike state (x=0) toward a semiconducting-like character as x=1 is approached, although the solubility limit of Ru precludes a crossover to a semiconducting behavior. The theoretical prediction has been experimentally confirmed by low-temperature electrical resistivity measurements from 2 up to 350 K.

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