期刊
IET POWER ELECTRONICS
卷 4, 期 6, 页码 708-714出版社
INST ENGINEERING TECHNOLOGY-IET
DOI: 10.1049/iet-pel.2010.0228
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-
资金
- US Department of Energy (DOE) [DE-FC26-07NT43124]
An all-SiC 0.25 MHz 5 kW multiphase dc/dc bidirectional boost converter, operating with a 105 degrees C inlet coolant temperature is described that serves as a charger for the intermediate high-voltage energy storage device (e. g. ultracapacitor) in a plug-in hybrid-electric vehicle (PHEV). The primary focus of this study is to report the high-temperature efficiency of the normally on SiC VJFET and SiC Schottky-based robust converter and identify the key loss components. Further, comparison of efficiencies for hard-switching, soft-switching and dynamic-power-management-based hard-switching conditions are provided that indicate efficacy as well as the limitation of the present-generation of the SiC VJFETs.
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