期刊
IEEE TRANSACTIONS ON PLASMA SCIENCE
卷 42, 期 12, 页码 3687-3690出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TPS.2014.2361640
关键词
Al-doped zinc oxide (AZO); H-2/Ar plasma; Inductively Coupled Plasma/Capacitively Coupled Plasma; optical emission spectroscopy
资金
- National Natural Science Foundation of China [11435009, 11175126, 11375126, 11475126]
- Key University Science Research Project of Jiangsu Province [13KJA140001]
Transparent conductive Al-doped zinc oxide thin films for film solar cells were prepared on Si and quartz substrates by radio frequency magnetron sputtering at room temperature. Then, these films were treated by high-density H-2/Ar plasma, which was capacitively coupled plasma combined with inductively coupled plasma modes. The density of hydrogen atoms was characterized by optical emission spectroscopy equipped in the system. The structural, electrical, and optical properties of the films were investigated in terms of spectrophotometry, Hall effect measurements, X-ray diffraction, scanning electron microscope, and atomic force microscopy. The effects of low-frequency power on the optical, electrical, and structural properties were discussed.
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