期刊
IEEE TRANSACTIONS ON PLASMA SCIENCE
卷 39, 期 2, 页码 700-703出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TPS.2010.2093910
关键词
a-plane ZnO; photoluminescence (PL); Raman; X-ray diffraction (XRD)
资金
- National Natural Science Foundation of China [50972007]
- Beijing Municipal Natural Science Foundation [4092035]
- Ministry of Science and Technology of China [2011CB932703]
- National Science Fund for Distinguished Young Scholars [60825407]
- Beijing Municipal Commission of Education
- State Key Laboratory on Integrated Optoelectronics
Structural and optical properties of ZnO epilayers grown on r-plane sapphire substrates by plasma-assisted molecular-beam epitaxy have been investigated using various techniques. A high-purity wurtzite structure and a smooth surface with an a-plane orientation were obtained. The resonant Raman scattering spectra show a typical multiphonon vibration characteristic from wurtzite ZnO. A good near band gap luminescence property is revealed in photoluminescence spectra.
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