4.3 Article

Research on the Temperature and Its Duration of Semiconductor-Bridge Plasma

期刊

IEEE TRANSACTIONS ON PLASMA SCIENCE
卷 37, 期 9, 页码 1830-1835

出版社

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TPS.2009.2025502

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Atomic emission spectroscopy; duration; plasma temperature; semiconductor-bridge (SCB) ignition

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The characteristics of semiconductor-bridge (SCB) plasma in the air have been studied. Based on the double line of atomic emission spectroscopy principle, a system for the research of SCB plasma is designed and developed. With this technique, SCB plasma temperature is diagnosed, and the standard deviation is less than 9%. Moreover, plasma temperature distribution Vs time is acquired, and the temporal resolution is 0.1 mu s. In addition, voltage and current signal above the SCB during the fire shot are monitored. These results indicate that the duration of SCB plasma is about 100 ms and the temperature changes dramatically in the air. The relation among plasma late time discharge, excitation energy, and plasma temperature is considered. Bridge shape and firing circuit also affect the plasma duration and plasma temperature.

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