Radiation Effects in Advanced Multiple Gate and Silicon-on-Insulator Transistors

标题
Radiation Effects in Advanced Multiple Gate and Silicon-on-Insulator Transistors
作者
关键词
-
出版物
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
Volume 60, Issue 3, Pages 1970-1991
出版商
Institute of Electrical and Electronics Engineers (IEEE)
发表日期
2013-05-24
DOI
10.1109/tns.2013.2255313

向作者/读者发起求助以获取更多资源

Publish scientific posters with Peeref

Peeref publishes scientific posters from all research disciplines. Our Diamond Open Access policy means free access to content and no publication fees for authors.

Learn More

Ask a Question. Answer a Question.

Quickly pose questions to the entire community. Debate answers and get clarity on the most important issues facing researchers.

Get Started