An Oxygen Gettering Scheme for Improving Device Mobility and Subthreshold Swing of InGaZnO-Based Thin-Film Transistor

标题
An Oxygen Gettering Scheme for Improving Device Mobility and Subthreshold Swing of InGaZnO-Based Thin-Film Transistor
作者
关键词
-
出版物
IEEE TRANSACTIONS ON NANOTECHNOLOGY
Volume 13, Issue 5, Pages 933-938
出版商
Institute of Electrical and Electronics Engineers (IEEE)
发表日期
2014-06-24
DOI
10.1109/tnano.2014.2332395

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