Proposal for Graphene–Boron Nitride Heterobilayer-Based Tunnel FET

标题
Proposal for Graphene–Boron Nitride Heterobilayer-Based Tunnel FET
作者
关键词
-
出版物
IEEE TRANSACTIONS ON NANOTECHNOLOGY
Volume 12, Issue 5, Pages 665-667
出版商
Institute of Electrical and Electronics Engineers (IEEE)
发表日期
2013-07-12
DOI
10.1109/tnano.2013.2272739

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