期刊
IEEE TRANSACTIONS ON NANOTECHNOLOGY
卷 9, 期 6, 页码 716-722出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TNANO.2010.2051334
关键词
MIM tunnel diode; rectenna; surface plasmon; traveling wave (TW)
We evaluate a technique to improve the performance of antenna-coupled diode rectifiers working in the IR. Efficient operation of conventional, lumped-element rectifiers is limited to the low terahertz. By using femtosecond-fast MIM diodes in a traveling-wave (TW) configuration, we obtain a distributed rectifier with improved bandwidth. This design gives higher detection efficiency due to a good match between the antenna impedance and the geometry-controlled impedance of the TW structure. We have developed a method for calculating the responsivity of the antenna-coupled TW detector. Three TW devices, made from different materials, are simulated to obtain their impedance and responsivity at 1.5, 3, 5, and 10 mu m wavelengths. The characteristic impedance of a 100-nm-wide TW is in the range of 50 Omega and has a small variation with frequency. A peak responsivity of 0.086 A/W is obtained for the Nb-Nb2O5-Nb TW diode at 3-mu m wavelength. This corresponds to a quantum efficiency of 3.6% and is a significant improvement over the antenna-coupled lumped-element diode rectifiers. For IR imaging, this results in a normalized detectivity of 4 x 10(6) Jones at 3 mu m. We have identified several ways for improving the detectivity of the TW detector. Possible methods include decreasing the diode resistance, reducing the noise, and increasing the effective antenna area.
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