Electrical Characteristics of the Backgated Bottom-Up Silicon Nanowire FETs

We report the electrical characteristics of backgated silicon nanowire (SiNW) FETs at temperatures ranging from 300 to 160 K. The voltage drop along the intrinsic part of the silicon nanowire (SiNW) was obtained by modeling the source/drain contacts as Schottky diodes. The field effect mobility values obtained from the extracted intrinsic voltage drop showed activation behaviors in the given temperature range. The activation energy was smaller than that of previously reported Ge nanowires.