A Fully Functional 64 Mb DDR3 ST-MRAM Built on 90 nm CMOS Technology

标题
A Fully Functional 64 Mb DDR3 ST-MRAM Built on 90 nm CMOS Technology
作者
关键词
-
出版物
IEEE TRANSACTIONS ON MAGNETICS
Volume 49, Issue 7, Pages 4441-4446
出版商
Institute of Electrical and Electronics Engineers (IEEE)
发表日期
2013-07-24
DOI
10.1109/tmag.2013.2243133

向作者/读者发起求助以获取更多资源

Publish scientific posters with Peeref

Peeref publishes scientific posters from all research disciplines. Our Diamond Open Access policy means free access to content and no publication fees for authors.

Learn More

Ask a Question. Answer a Question.

Quickly pose questions to the entire community. Debate answers and get clarity on the most important issues facing researchers.

Get Started