标题
Graphene Epitaxial Growth on SiC(0001) for Resistance Standards
作者
关键词
-
出版物
IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT
Volume 62, Issue 6, Pages 1454-1460
出版商
Institute of Electrical and Electronics Engineers (IEEE)
发表日期
2013-01-16
DOI
10.1109/tim.2012.2225962
参考文献
相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。- Non-Volatile Photochemical Gating of an Epitaxial Graphene/Polymer Heterostructure
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