4.7 Article

A CMOS integrable oscillator-based front end for high-dynamic-range resistive sensors

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IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TIM.2008.922075

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complementary metal-oxide-semiconductor (CMOS) sensor interfaces; gas sensors; metal-oxide (MOX) sensors; resistance and capacitance estimation; wide-range sensor variation

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A new oscillating circuit is proposed to estimate the resistance and parallel parasitic capacitance of resistive chemical sensors. The circuit is able to reveal the resistance in a wide range (from tens of kiloohms to more than 100 GQ) due to the adopted resistance-to-time technique. In addition, the parallel capacitance (up to 50 pF) can be estimated. The circuit, which does not need any initial calibration, is very simple and compact and is suitable to be integrated with a standard CMOS technology to obtain a low-cost and, low-power device for a sensor array interface. Different kinds of postlayout simulations concerning the CMOS integrated implementation have been conducted. Experimental results obtained using a discrete prototype board, both on passive components and on real sensors (metal-oxide sensors), have shown good linearity and reduced percentage error with respect to the theoretical expectations.

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