Fully Current-Based Sub-Bandgap Optoelectronic Differential Ideality Factor Technique and Extraction of Subgap DOS in Amorphous Semiconductor TFTs

标题
Fully Current-Based Sub-Bandgap Optoelectronic Differential Ideality Factor Technique and Extraction of Subgap DOS in Amorphous Semiconductor TFTs
作者
关键词
-
出版物
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 61, Issue 10, Pages 3566-3569
出版商
Institute of Electrical and Electronics Engineers (IEEE)
发表日期
2014-09-09
DOI
10.1109/ted.2014.2348592

向作者/读者发起求助以获取更多资源

Find Funding. Review Successful Grants.

Explore over 25,000 new funding opportunities and over 6,000,000 successful grants.

Explore

Add your recorded webinar

Do you already have a recorded webinar? Grow your audience and get more views by easily listing your recording on Peeref.

Upload Now