期刊
IEEE TRANSACTIONS ON ELECTRON DEVICES
卷 61, 期 8, 页码 2920-2927出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2014.2330202
关键词
Noise fluctuations; random telegraph noise (RTN); resistive-switching random access memory (RRAM)
资金
- Intel [55887]
- Fondazione Cariplo [2010-0500]
A key concern for resistive-switching random access memory (RRAM) is the read noise, due to the structural, chemical, and electrical modifications taking place at the localized current path, or conductive filament (CF). Read noise typically appears as a random telegraph noise (RTN), where the current randomly fluctuates between ON and OFF levels. This paper addresses RTN in RRAM, providing physical interpretations and models for the dependence on the programming and read conditions. First, we explain the RTN dependence on the compliance current during set transition in terms of the size-dependent depletion of carriers within the CF. Then, we discuss the bias dependence of the RTN switching times and amplitude, which can be explained by Joule heating and Poole-Frenkel barrier modifications arising from the electrostatics of the RTN fluctuating center.
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