Article
Chemistry, Physical
M. D. Yasir Bashir, Mohd. Adil Raushan, Shameem Ahmad, Mohammed Jawaid Siddiqui
Summary: This study introduces a dual material gate with dual-k dielectric gate oxide double gate junctionless transistor, which shows suppressed leakage current in the off state and superior performance in various metrics such as transconductance, early voltage, and intrinsic gain. Additionally, further improvements are achieved by adding high-k gate sidewall spacers.
Article
Chemistry, Analytical
Haiwu Xie, Hongxia Liu
Summary: This paper proposes a new type of heterostructure junctionless tunnel FET biosensor with an embedded nanogap, which can electrically sense the characteristics of biomolecules. The detection sensitivity of different biomolecules can be adjusted by two different gates. The influence of different gate work functions and dielectric constants on sensitivity is explored, and the simulation results show high switch ratio and sensitivity for the proposed biosensor.
Review
Chemistry, Physical
Manish Kumar Rai, Abhinav Gupta, Sanjeev Rai
Summary: The paper focuses on the bottleneck of leakage current in MOS devices with the growth of semiconductor industry. It investigates a detailed comparative analysis of various leakage currents with or without short channel effects, and explores techniques to minimize the leakage. Quantitative analysis of leakage affecting various short channel devices has been performed.
Article
Chemistry, Physical
Nawaz Shafi, Jaydeep Singh Parmaar, Ankita Porwal, Aasif Mohammad Bhat, Chitrakant Sahu, C. Periasamy
Summary: In this work, a hybrid biosensor based on embedded cavity gate all around junctionless field effect transistors is demonstrated for the first time, providing simultaneous sensing, amplification, and noise cancellation capabilities. By utilizing p-type and n-type FETs for sensing simultaneously, the drawbacks of low sensitivity and noise in traditional biosensor systems are mitigated. The proposed hybrid biosensor leverages the dielectric modulation property of embedded nanogap cavity biologically sensitive field effect transistors for improved performance.
Article
Engineering, Electrical & Electronic
Nawaz Shafi, Aasif Mohamad Bhat, Jaydeep Singh Parmar, Chitrakant Sahu, C. Periasamy
Summary: An analytical model based on surface potential for planar junctionless field effect transistor (JL-FET) for pH sensing is proposed in this paper. The model considers the effect of electrolyte concentration on threshold voltage and drain current, and various figure of merits were computed and analyzed, showing good coherence with TCAD simulation results.
IEEE TRANSACTIONS ON NANOTECHNOLOGY
(2021)
Article
Chemistry, Multidisciplinary
Sangeeta Singh, Shradhya Singh, Mustafa K. A. Mohammed, Kamal Kishor Jha, Sajad A. Loan
Summary: In this study, an ultrasensitive, label-free ferroelectric junctionless tunnel field effect transistor-based biosensor is proposed and simulated. The biosensor utilizes a dual inverted-T cavity and negative capacitance behavior to enhance the detection sensitivity of biomolecules. By optimizing the device parameters, the sensing capability of the biosensor is significantly improved compared to other state-of-the-art biosensors.
Article
Engineering, Electrical & Electronic
William Cheng-Yu Ma, Cai-Jia Tsai
Summary: The independent dual-gate operation improves performance and reliability of the JL-TFT, but may also cause more serious damages. The back gate voltage operation mode provides a wide threshold voltage tuning range, but it is important to note that positive top gate voltage stress may lead to more serious reliability issues.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2021)
Article
Chemistry, Physical
Navneet Kaur, Sandeep Singh Gill, Prabhjot Kaur
Summary: The performance of a junctionless transistor with spacers at 15 nm gate length is evaluated in this study using Cogenda TCAD tool. The impact of different spacer parameters on device performance is analyzed, and it is found that placing dual-kappa spacers along the sides of the gate region improves the device's output parameters.
Article
Chemistry, Physical
Satya Prakash Singh, Md. Waseem Akram
Summary: This paper evaluates the influences of uniform and non-uniform doping on the performance of SOI and SELBOX FinFETs at gate length of sub-7 nm. It is found that the multi-gate structure with SELBOX technology shows the best results under non-uniform doping profile.
Article
Engineering, Electrical & Electronic
Mahdi Vadizadeh
Summary: A GaAs/InAs/Ge junctionless tunnel field-effect transistor (JL-TFET) device with a dual-material gate (DMG) structure is proposed in this article, showing improved performance parameters compared to traditional devices and offering potential for significant impact in digital applications.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2021)
Article
Chemistry, Physical
Bhaskar Kumar, Bharat Gupta, Sangeeta Singh, Pankaj Kumar
Summary: The study shows that the combination of FIN shaped gate with ground plane can alleviate the L-BTBT effect and improve the performance of JLFET. The proposed device demonstrates significant advantages, especially at sub-10 nm node, under the conditions of ultra-thin silicon thickness and high workfunction requirements.
Article
Chemistry, Physical
Rambabu Kusuma, V. K. Hanumantha Rao Talari
Summary: In this paper, the authors designed and analyzed the performance of Dual Material Gate Junctionless FinFET (DMG JLFinFET) using gate engineering with high-k dielectrics for nanoscale applications. They optimized the doping and work function, and found that replacing gate oxide with high-k materials improved the device performance in terms of I-on/I-off, SS, and DIBL. The fine tuning of gate work function also reduced short channel effects. In conclusion, the DMG JLFinFET is best suited for low power nanoscale applications, as evidenced by the ratio of I-on/I-off with Fin height and Fin width variation.
Article
Engineering, Electrical & Electronic
Mehran Heidari, Ali A. Orouji, S. Amir Bozorgi
Summary: This paper presents a nanoscale junctionless double-gate FET with a beta-Ga2O3 packet that enhances the electric field and improves the device's performance. By placing the beta-Ga2O3 packet at the source-channel intersection, the distribution and peak of the electric field are altered, resulting in temperature reduction and increased carrier mobility. The proposed device demonstrates significant improvements in lattice temperature, electron mobility, leakage current, and other properties compared to a conventional structure.
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
(2023)
Article
Computer Science, Hardware & Architecture
Gaurav Mangal, Aman Tyagi, Rishu Chaujar
Summary: The study demonstrates that the fully gate-covered junctionless SOI FinFET exhibits better performance and greater stability at higher temperatures. Traditional devices are more adversely affected by temperature in terms of short channel parameters. Therefore, this device holds potential for high-temperature applications.
COMPUTERS & ELECTRICAL ENGINEERING
(2022)
Proceedings Paper
Nanoscience & Nanotechnology
Nurul Nasirah Afiqah Nasir, Noraini Othman, Syarifah Norfaezah Sabki, Alhan Farhanah Abd Rahim
Summary: In this study, the impact of doping concentrations and gate underlap on the electrical performance of a double-gate junctionless transistor was researched. It was found that doping concentrations have a greater impact on the performance compared to gate underlap, with an optimal concentration of 1 x10(18) cm(-3). Additionally, longer gate underlap lengths resulted in better electrical characteristics.
2021 IEEE INTERNATIONAL CONFERENCE ON SENSORS AND NANOTECHNOLOGY (SENNANO)
(2021)
Article
Engineering, Electrical & Electronic
Satyajit Bora, Roy Paily
Summary: This article introduces a novel iterative binary division method with the aim of reducing delays in hardware implementation, and conducts a study on area, power consumption, and delays. The study shows that the divider designed at the UMC 40nm technology node has small area and power consumption, as well as low latency.
CIRCUITS SYSTEMS AND SIGNAL PROCESSING
(2022)
Article
Engineering, Electrical & Electronic
Siddhanta Roy, Pralay Chakrabarty, Roy Paily
Summary: The research investigates the RF/AC performance of MFIS NCFETs compared to traditional FDSOI FETs through TCAD simulation, showing that MFIS NCFETs perform better in certain performance metrics, especially in terms of linearity.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2022)
Article
Engineering, Electrical & Electronic
Rohit Lorenzo, Roy Paily
Summary: This work introduces a new 8T SRAM cell that is robust and low leakage, without any half-selection disturbance. The proposed cell eliminates write disturbance by getting rid of the trail from supply and ground, and removes read disturbance by separating the read trail from the storage node. It addresses the challenge of half select by utilizing different control signals, achieving low leakage through the use of virtual ground, series connected tail transistor, and access series stack transistors.
INTERNATIONAL JOURNAL OF CIRCUIT THEORY AND APPLICATIONS
(2022)
Article
Engineering, Electrical & Electronic
Pralay Chakrabarty, Roy P. Paily
Summary: This study investigates the navigation of magnetic microparticles in a microfluidic channel using an external magnetic field. By applying a time-varying magnetic field with different modes of operation, the aggregation and sticking of microparticles can be effectively reduced, resulting in efficient navigation.
IEEE MAGNETICS LETTERS
(2022)
Article
Engineering, Electrical & Electronic
Thomas T. Daniel, Vimal Kumar Singh Yadav, Emlin Elsa Abraham, Roy P. Paily
Summary: This work presents the fabrication of a Zinc oxide (ZnO) Schottky diode-based Carbon monoxide (CO) sensor capable of detecting CO at concentrations as low as one part per million (ppm) at room temperature. Different additive microfabrication techniques were employed to fabricate the devices. The use of a microcantilever printing system enabled precise control during fabrication, resulting in a fully printed sensor with a high sensitivity of 23.7% towards CO at room temperature. The height of the Schottky barrier was found to significantly impact the device's response.
IEEE SENSORS JOURNAL
(2022)
Article
Engineering, Electrical & Electronic
Pralay Chakrabarty, Siddhanta Roy, Roy P. Paily
Summary: This article addresses the stiction issue of magnetic nanoparticles in a targeted drug delivery system using an external electromagnetic actuation system. It proposes an EMA system with four coils and alternating operating modes to efficiently steer the MNPs and mitigate particle adhesion.
IEEE TRANSACTIONS ON MAGNETICS
(2022)
Article
Biochemical Research Methods
Ujjwol Barman, Upashi Goswami, Siddhartha Sankar Ghosh, Roy P. Paily
Summary: This paper reports the fabrication and characterization of a ZnO nanoparticle based Field Effect Transistor (FET) device for simple, rapid, and label-free bacteria detection. The interaction between ZnO nanoparticles and bacteria samples was utilized to differentiate between gram positive and gram-negative bacteria. The study achieved sensitivity and Limit of Detection (LOD) values for gram negative bacteria of 9.48 nA/CFU/mL and 776 CFU/mL respectively, and 6.96 nA/CFU/mL and 665 CFU/mL for gram positive bacteria.
IEEE TRANSACTIONS ON NANOBIOSCIENCE
(2022)
Article
Engineering, Electrical & Electronic
Monica Naorem, Roy P. Paily
Summary: This study demonstrates the application of graphene oxide-silver (GO/Ag) nanocomposite in a non-enzymatic high-performance glucose sensor, which has high sensitivity, fast response, and good stability, reproducibility, and selectivity.
IEEE SENSORS JOURNAL
(2022)
Article
Engineering, Electrical & Electronic
Ujjaval Kerketta, Thomas T. T. Daniel, Vimal Kumar Singh Yadav, Roy P. P. Paily
Summary: A Zn2TiO4 thin film was formed on a Si/SiO2 substrate using a spin coating process with Al electrodes. This device exhibits excellent hydrogen (H-2) gas sensing properties. The thin film's phase and crystal structure were analyzed through X-ray diffraction. The sensor demonstrates a linear response to H-2 gas concentrations from 50 to 250 ppm at room temperature, and shows good sensitivity to low ppm levels of H-2. The response time of the sensor at 250-ppm H-2 is approximately 76 s. The sensor response can be fitted to the Langmuir adsorption model.
IEEE SENSORS LETTERS
(2023)
Article
Engineering, Electrical & Electronic
Vinod Kumar Vishwakarma, Mrinmoy Roy, Rajan Singh, Doddamane Sreenivasamurthy Shankar Rao, Roy Paily, Achalkumar Ammathnadu Sudhakar
Summary: Researchers designed and synthesized four imidazole-containing liquid-crystalline compounds based on naphthalene and perylene bisimide. These compounds possessed liquid crystallinity and solution processability, making them suitable for use as organic semiconductors. The compounds exhibited different columnar phases, with greater thermal stability and lower band gaps observed in both naphthalene and perylene bisimide derivatives. Two of the compounds were used for the fabrication of organic field-effect transistors, demonstrating high hole mobility in normal air conditions.
ACS APPLIED ELECTRONIC MATERIALS
(2023)
Review
Engineering, Electrical & Electronic
Arun Mohan, Saroj Mondal, Surya Shankar Dan, Roy P. Paily
Summary: This article presents a comprehensive study and analysis of rectifier topologies and circuit techniques in wireless power transfer systems, aiming to achieve higher power conversion efficiency. Different passive rectifier topologies suitable for low-power applications have been designed and simulated. Experimental results show that the auxiliary compensation technique can achieve a peak power conversion efficiency of about 80%.
IEEE SENSORS JOURNAL
(2023)
Article
Computer Science, Information Systems
Thockchom Birjit Singha, Roy Paily Palathinkal, Shaik Rafi Ahamed
Summary: With the rise of the Internet of Things (IoT), hardware security has become an important concern due to the potential risks of side-channel attacks. This article discusses the development of encryption standard AES and its core component, the substitution-box (S-box), over the past 20 years. It also provides a comprehensive review of the latest S-box design techniques and analyzes their impact on various factors such as gate count, area, throughput, and power. Additionally, the article examines countermeasures designed to protect AES against power analysis attacks, considering their security metrics and design overheads.
IEEE INTERNET OF THINGS JOURNAL
(2023)
Article
Engineering, Electrical & Electronic
S. Raveesh, Vimal Kumar Singh Yadav, Thomas T. Daniel, Roy Paily
Summary: This study presents the use of copper oxide (CuO) single nanowire (SNW) based devices for the detection of volatile organic compounds (VOCs). CuO nanowires were synthesized by thermally oxidizing copper, and SNW-back-to-back Schottky diode electrodes were fabricated using microcantilever contact print of silver nanoparticles on a Si-SiO2 substrate. The devices with different channel lengths were able to detect VOCs such as ethanol, acetone, and 2-propanol within a concentration range of 25-100 ppm. The maximum response of the device was 1.1% and 4.86% under different operating conditions, with a limit of detection of 15.4 ppm. The device showed limited performance but remained stable for four months.
IEEE TRANSACTIONS ON NANOTECHNOLOGY
(2023)
Article
Engineering, Electrical & Electronic
Vinod Kumar Vishwakarma, Mrinmoy Roy, Rajan Singh, Doddamane Sreenivasamurthy Shankar Rao, Roy Paily, Achalkumar Ammathnadu Sudhakar
Summary: We designed and synthesized four liquid-crystalline derivatives based on naphthalene and perylene bisimide with imidazole-containing groups. These compounds with 10 flexible peripheral chains possess liquid crystallinity and solution processability, suitable for use as organic semiconductors. They showed different columnar phases and exhibited higher thermal stability and lower band gaps. The NI derivatives showed larger Stokes shifts, while the PI derivatives exhibited very high molar extinction coefficients. Two solution-processable liquid-crystalline compounds (NI-12 and PI-12) were used to fabricate organic field-effect transistors, with NI-12 derivatives showing a hole mobility of 1.99 cm2/V center dot s and PI-12 derivatives showing a hole mobility of 0.63 cm2/V center dot s at room temperature in normal air conditions.
ACS APPLIED ELECTRONIC MATERIALS
(2023)
Article
Engineering, Electrical & Electronic
S. Raveesh, Vimal Kumar Singh Yadav, Roy Paily
Summary: This work presents the synthesis of CuO nanowires via thermal oxidation and microcantilever contact print of Ag nanoparticles on Si-SiO2 substrate to fabricate FETs. The fabricated FETs exhibit p-type conduction and the hole mobility ranges from 0.14 to 0.36 cm(2)V(-1) s(-1). The developed CuO SNW FETs are stable and capable of detecting white light at room temperature and ethanol at 150 degrees C.
IEEE TRANSACTIONS ON NANOTECHNOLOGY
(2023)
