Very Large Current Modulation in Vertical Heterostructure Graphene/hBN Transistors

标题
Very Large Current Modulation in Vertical Heterostructure Graphene/hBN Transistors
作者
关键词
-
出版物
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 60, Issue 1, Pages 268-273
出版商
Institute of Electrical and Electronics Engineers (IEEE)
发表日期
2012-12-20
DOI
10.1109/ted.2012.2226464

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