4.6 Article

Transport Gap in Dual-Gated Graphene Bilayers Using Oxides as Dielectrics

期刊

IEEE TRANSACTIONS ON ELECTRON DEVICES
卷 60, 期 1, 页码 103-108

出版社

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2012.2228203

关键词

Bilayer; graphene; transport gap

资金

  1. ONR
  2. NRI
  3. NSF [DMR-0819860]
  4. Research Settlement Fund for the new faculty of SNU

向作者/读者索取更多资源

Graphene bilayers in Bernal stacking exhibit a transverse electric (E) field-dependent band gap, which can be used to increase the channel resistivity and enable higher on/off ratio devices. We provide a systematic investigation of transport characteristics in dual-gated graphene bilayer devices as a function of density and E field and at temperatures from room temperature down to 0.3 K. The sample conductivity shows finite threshold voltages along the electron and hole branches, which increase as the E field increases, similar to a gapped semiconductor. We extract the transport gap as a function of E field and discuss the impact of disorder. In addition, we show that beyond the threshold, the bilayer conductivity shows a highly linear dependence on density, which is largely insensitive to the applied E field and the temperature.

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