Sub-60-nm Extremely Thin Body ${\rm In}_{x}{\rm Ga}_{1-x}{\rm As}$-On-Insulator MOSFETs on Si With Ni-InGaAs Metal S/D and MOS Interface Buffer Engineering and Its Scalability

Electron Mobility Enhancement of Extremely Thin Body In$_{0.7}$Ga$_{0.3}$As-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors on Si Substrates by Metal–Oxide–Semiconductor Interface Buffer Layers

(2011) SangHyeon Kim et al.   Applied Physics Express

Self-Aligned Metal Source/Drain InxGa1-xAs n-Metal–Oxide–Semiconductor Field-Effect Transistors Using Ni–InGaAs Alloy

(2011) SangHyeon Kim et al.   Applied Physics Express

High Performance Extremely Thin Body InGaAs-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors on Si Substrates with Ni–InGaAs Metal Source/Drain

(2011) SangHyeon Kim et al.   Applied Physics Express

III-V-on-nothing metal-oxide-semiconductor field-effect transistors enabled by top-down nanowire release process: Experiment and simulation

(2011) J. J. Gu et al.   APPLIED PHYSICS LETTERS

Benchmarking the performance of ultrathin body InAs-on-insulator transistors as a function of body thickness

(2011) Kuniharu Takei et al.   APPLIED PHYSICS LETTERS

III–V Multiple-Gate Field-Effect Transistors With High-Mobility $\hbox{In}_{0.7}\hbox{Ga}_{0.3}\hbox{As}$ Channel and Epi-Controlled Retrograde-Doped Fin

(2011) Hock-Chun Chin et al.   IEEE ELECTRON DEVICE LETTERS

Quantum Confinement Effects in Nanoscale-Thickness InAs Membranes

(2011) Kuniharu Takei et al.   NANO LETTERS

III-V-semiconductor-on-insulator n-channel metal-insulator-semiconductor field-effect transistors with buried Al2O3 layers and sulfur passivation: Reduction in carrier scattering at the bottom interface

(2010) Masafumi Yokoyama et al.   APPLIED PHYSICS LETTERS

Ultrathin compound semiconductor on insulator layers for high-performance nanoscale transistors

(2010) Hyunhyub Ko et al.   NATURE

Thin Body III–V-Semiconductor-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors on Si Fabricated Using Direct Wafer Bonding

(2009) Masafumi Yokoyama et al.   Applied Physics Express

Undoped-Body Extremely Thin SOI MOSFETs With Back Gates

(2009) Amlan Majumdar et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Development of a Vertical Wrap-Gated InAs FET

(2008) Claes Thelander et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES