期刊
IEEE TRANSACTIONS ON ELECTRON DEVICES
卷 60, 期 10, 页码 3005-3011出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2013.2272330
关键词
AlInGaN; depletion mode; enhancement mode; gallium nitride; p-channel; quaternary
资金
- Deutsche Forschungsgemeinschaft
Within the last years, III-nitride-based devices have been demonstrated with exceptional performance. There is, however, a severe lack of knowledge when it comes fabrication of p-channel devices. p-Channel heterostructure field-effect transistors (HFETs) could open the way for nitride-based complementary logic. Here, a comprehensive study of enhancement and depletion mode p-channel GaN/AlInGaN HFETs is performed. The influence of a highly p-doped GaN cap layer on device performance is investigated. Gate recessing and changes in composition of the backbarrier are analyzed. ON/OFF ratios of up to 10(8) and subthreshold swings of about 75 mV/decade are achieved.
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