Material Selection for Minimizing Direct Tunneling in Nanowire Transistors

NEMO5: A Parallel Multiscale Nanoelectronics Modeling Tool

(2011) Sebastian Steiger et al.   IEEE TRANSACTIONS ON NANOTECHNOLOGY

Effects of band-tails on the subthreshold characteristics of nanowire band-to-band tunneling transistors

(2011) M. Abul Khayer et al.   JOURNAL OF APPLIED PHYSICS

Programmable nanowire circuits for nanoprocessors

(2011) Hao Yan et al.   NATURE

Simulation of nanowire tunneling transistors: From the Wentzel–Kramers–Brillouin approximation to full-band phonon-assisted tunneling

(2010) Mathieu Luisier et al.   JOURNAL OF APPLIED PHYSICS

Modeling and performance analysis of GaN nanowire field-effect transistors and band-to-band tunneling field-effect transistors

(2010) M. Abul Khayer et al.   JOURNAL OF APPLIED PHYSICS

InAs/GaSb Heterostructure Nanowires for Tunnel Field-Effect Transistors

(2010) B. Mattias Borg et al.   NANO LETTERS

III-V Nanowires—Extending a Narrowing Road

(2010) Lars-Erik Wernersson et al.   PROCEEDINGS OF THE IEEE

Performance analysis of InP nanowire band-to-band tunneling field-effect transistors

(2009) M. Abul Khayer et al.   APPLIED PHYSICS LETTERS

Drive Currents and Leakage Currents in InSb and InAs Nanowire and Carbon Nanotube Band-to-Band Tunneling FETs

(2009) M.A. Khayer et al.   IEEE ELECTRON DEVICE LETTERS

Atomistic Full-Band Design Study of InAs Band-to-Band Tunneling Field-Effect Transistors

(2009) Mathieu Luisier et al.   IEEE ELECTRON DEVICE LETTERS

Atomistic full-band simulations of silicon nanowire transistors: Effects of electron-phonon scattering

(2009) Mathieu Luisier et al.   PHYSICAL REVIEW B

Performance of $n$-Type InSb and InAs Nanowire Field-Effect Transistors

(2008) M. Abul Khayer et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Bandstructure Effects in Silicon Nanowire Electron Transport

(2008) Neophytos Neophytou et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Toward Nanowire Electronics

(2008) Joerg Appenzeller et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Impact of source-to-drain tunnelling on the scalability of arbitrary oriented alternative channel material nMOSFETs

(2008) Quentin Rafhay et al.   SOLID-STATE ELECTRONICS