Characterization of Edge Fringing Effect on the $C$ –$V$ Responses From Depletion to Deep Depletion of MOS(p) Capacitors With Ultrathin Oxide and High-$\kappa$ Dielectric

Comprehensive Study on Negative Capacitance Effect Observed in MOS(n) Capacitors With Ultrathin Gate Oxides

(2011) Shu-Jau Chang et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Metal-oxide-semiconductor tunneling photodiodes with enhanced deep depletion at edge by high-k material

(2010) Jen-Yuan Cheng et al.   APPLIED PHYSICS LETTERS

Through-Silicon-Via Capacitance Reduction Technique to Benefit 3-D IC Performance

(2010) Guruprasad Katti et al.   IEEE ELECTRON DEVICE LETTERS

Characterization of Inversion Tunneling Current Saturation Behavior for MOS(p) Capacitors With Ultrathin Oxides and High-$k$ Dielectrics

(2009) Chih-Hao Chen et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Comprehensive study on the deep depletion capacitance-voltage behavior for metal-oxide-semiconductor capacitor with ultrathin oxides

(2009) Jen-Yuan Cheng et al.   JOURNAL OF APPLIED PHYSICS

First-principles study of leakage current through aSi/SiO2interface

(2009) Tomoya Ono   PHYSICAL REVIEW B

Lateral Nonuniformity Effects of Border Traps on the Characteristics of Metal–Oxide–Semiconductor Field-Effect Transistors Subjected to High-Field Stresses

(2008) Jen-Chou Tseng et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES