期刊
IEEE TRANSACTIONS ON ELECTRON DEVICES
卷 59, 期 1, 页码 46-50出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2011.2170993
关键词
Disordered semiconductors; MOSFET compact modeling; ZnO thin-film transistors (TFTs)
A new explicit model for long-channel nanocrystalline zinc oxide thin-film transistors is presented. The proposed equation is fully explicit by virtue of its use of the Lambert function. Consequently, the drain current can be directly calculated without the need of numerical iteration or approximations. Additionally, the proposed equation is analytically differentiable, allowing the straightforward derivation of explicit expressions for the transconductance and the output conductance of these devices.
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