4.6 Article

An Explicit Analytic Compact Model for Nanocrystalline Zinc Oxide Thin-Film Transistors

期刊

IEEE TRANSACTIONS ON ELECTRON DEVICES
卷 59, 期 1, 页码 46-50

出版社

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2011.2170993

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Disordered semiconductors; MOSFET compact modeling; ZnO thin-film transistors (TFTs)

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A new explicit model for long-channel nanocrystalline zinc oxide thin-film transistors is presented. The proposed equation is fully explicit by virtue of its use of the Lambert function. Consequently, the drain current can be directly calculated without the need of numerical iteration or approximations. Additionally, the proposed equation is analytically differentiable, allowing the straightforward derivation of explicit expressions for the transconductance and the output conductance of these devices.

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