Improved Subthreshold Swing and Gate-Bias Stressing Stability of p-Type $\hbox{Cu}_{2}\hbox{O}$ Thin-Film Transistors Using a $\hbox{HfO}_{2}$ High-$k$ Gate Dielectric Grown on a $\hbox{SiO}_{2}/\hbox{Si}$ Substrate by Pulsed Laser Ablation

标题
Improved Subthreshold Swing and Gate-Bias Stressing Stability of p-Type $\hbox{Cu}_{2}\hbox{O}$ Thin-Film Transistors Using a $\hbox{HfO}_{2}$ High-$k$ Gate Dielectric Grown on a $\hbox{SiO}_{2}/\hbox{Si}$ Substrate by Pulsed Laser Ablation
作者
关键词
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出版物
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 58, Issue 7, Pages 2003-2007
出版商
Institute of Electrical and Electronics Engineers (IEEE)
发表日期
2011-05-04
DOI
10.1109/ted.2011.2142313

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