Defect Generation at Charge-Passivated $\hbox{Si}$–$\hbox{SiO}_{2}$ Interfaces by Ultraviolet Light

标题
Defect Generation at Charge-Passivated $\hbox{Si}$–$\hbox{SiO}_{2}$ Interfaces by Ultraviolet Light
作者
关键词
-
出版物
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 57, Issue 8, Pages 1996-2004
出版商
Institute of Electrical and Electronics Engineers (IEEE)
发表日期
2010-07-01
DOI
10.1109/ted.2010.2051199

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