Characterization of Inversion-Layer Capacitance of Electrons in High- $k$/Metal Gate Stacks

标题
Characterization of Inversion-Layer Capacitance of Electrons in High- $k$/Metal Gate Stacks
作者
关键词
-
出版物
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 57, Issue 11, Pages 2814-2820
出版商
Institute of Electrical and Electronics Engineers (IEEE)
发表日期
2010-09-02
DOI
10.1109/ted.2010.2064317

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