Effects of Vanadium Doping on Resistive Switching Characteristics and Mechanisms of $\hbox{SrZrO}_{3}$-Based Memory Films

出版年份 2010 全文链接

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出版物

IEEE TRANSACTIONS ON ELECTRON DEVICES

Volume 57, Issue 8, Pages 1801-1808

出版商

Institute of Electrical and Electronics Engineers (IEEE)

发表日期

2010-06-17

DOI

10.1109/ted.2010.2050837

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IEEE TRANSACTIONS ON ELECTRON DEVICES

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