4.6 Article

Microfabrication and Characterization of a Selectively Metallized W-Band Meander-Line TWT Circuit

期刊

IEEE TRANSACTIONS ON ELECTRON DEVICES
卷 56, 期 5, 页码 730-737

出版社

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2009.2015416

关键词

Meander-line; microfabrication; millimeter-wave (mm-wave); slow-wave structure (SWS); traveling-wave tube (TWT); W-band

资金

  1. U.S. Army [W911NF04-C-01 12]
  2. U.S. Air Force Office of Scientific Research [FA9550-06-C-0085]

向作者/读者索取更多资源

Vacuum electronic devices offer significant potential for increased power and performance at millimeter-wave frequencies. However, new approaches are required to reliably manufacture the miniature electromagnetic circuits used at these high frequencies. In this paper, we describe the design, fabrication, and testing of an innovative meander-line slow-wave structure for a W-band traveling-wave tube (TWT). The unique challenge of metallizing only the top of a high-aspect-ratio serpentine dielectric ridge using conventionally planar microfabrication techniques is overcome using a novel selective masking and metallization process. The procedure is demonstrated by fabricating a W-band meander-line circuit for a 10-W continuous-wave TWT. Cold-test S-parameter measurements are presented.

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