☆ 4.6 Article

MOSFET Degradation Under RF Stress

IEEE TRANSACTIONS ON ELECTRON DEVICES (2008)

期刊

IEEE TRANSACTIONS ON ELECTRON DEVICES

卷 55, 期 11, 页码 3167-3174

出版社

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC

DOI: 10.1109/TED.2008.2004650

关键词

Breakdown; CMOS; device reliability; dielectric breakdown; dielectrics; hot-carrier degradation; negative-bias temperature instability (NBTI); reliability; RF; RF CMOS

类别

Engineering, Electrical & Electronic Physics, Applied

资金

Dutch Technology Foundation STW

向作者/读者索取更多资源

Protocol

Reagent

摘要

We report on the degradation of MOS transistors under RF stress. Hot-carrier degradation, negative-bias temperature instability, and gate dielectric breakdown are investigated. The findings are compared to established voltage- and field-driven models. The experimental results indicate that the existing models are well applicable into the gigahertz range to describe the degradation of MOS transistors in an RF circuit. The probability of gate dielectric breakdown appears to reduce rapidly at such high stress frequencies, increasing the design margin for RF power circuits.

作者

我是这篇论文的作者

点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.6

评分不足

次要评分

新颖性

-

重要性

-

科学严谨性

-

评价这篇论文

推荐

Article Engineering, Electrical & Electronic

Aging in CMOS RF Linear Power Amplifiers: An Experimental Study

Xavier Aragones, Enrique Barajas, Albert Crespo-Yepes, Diego Mateo, Rosana Rodriguez, Javier Martin-Martinez, Montserrat Nafria

Summary: The article presents an extensive experimental analysis of the aging effects on RF linear power amplifiers due to HCI and BTI, with two different PA topologies implemented in a CMOS 65-nm technology. The study shows that the reduced transistor degradation in CR PA results in higher robustness in RF parameters compared with CS PA circuit.

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES (2021)

添加到收藏夹

Article Computer Science, Hardware & Architecture

CMOS 16FF Digital Power Amplifier RF Reliability Characterization

L. Zohar, I. Shternberg, B. Khamaisi, A. Nazimov, A. Ben-Bassat, O. Degani

Summary: This letter describes the reliability characterization process of a switched capacitor digital power amplifier (SCDPA) manufactured in CMOS acrlong 16FF technology. It explains the design analysis, stress experiments, and the novel solution to overcome NBTI and second harmonics degradation issues.

IEEE SOLID-STATE CIRCUITS LETTERS (2023)

添加到收藏夹

Article Engineering, Electrical & Electronic

Abnormal Two-Stage Degradation Under Hot Carrier Injection With Lateral Double-Diffused MOS With 0.13-μm Bipolar-CMOS-DMOS Technology

Wei-Chun Hung, Yu-Fa Tu, Ting-Chang Chang, Mao-Chou Tai, Kuan-Hsu Chen, Fu-Yuan Jin, Chien-Hung Yeh, Wei-Chieh Hung, Chin-Han Chang, Hung-Ming Kuo, Chen-Hsin Lien

Summary: This work explores the issue of abnormal two-stage hot carrier injection (HCI) degradation in n-type lateral double-diffused MOS (LDMOS) transistors. The degradation mechanism consists of two stages: electron injection into the interface layer (IL) caused by impact ionization under the contact field plate (CFP), and positive bias temperature instability (PBTI) effects caused by Joule heating. Temperature variation experiments and TCAD simulations have shown that HCI can lead to severe PBTI effects and device degradation.

IEEE TRANSACTIONS ON ELECTRON DEVICES (2023)

添加到收藏夹

Review Computer Science, Information Systems

Bias Temperature Instability of MOSFETs: Physical Processes, Models, and Prediction

Jian Fu Zhang, Rui Gao, Meng Duan, Zhigang Ji, Weidong Zhang, John Marsland

Summary: This paper discusses the impact of device aging on chip design in CMOS technology. The focus is on the study of negative and positive bias temperature instabilities (NBTI and PBTI) and proposes a new As-grown-Generation (AG) model for predicting long-term BTI at low biases.

ELECTRONICS (2022)

添加到收藏夹

Article Engineering, Electrical & Electronic

An Automated Setup for the Characterization of Time-Based Degradation Effects Including the Process Variability in 40-nm CMOS Transistors

Xhesila Xhafa, Ali Dogus Gungordu, Didem Erol, Yavuzhan Yavuz, Mustafa Berke Yelten

Summary: This article discusses a test chip design in 40-nm process technology to characterize the degradation in MOSFETs caused by time-based factors. Results show that BTI and HCI affect transistor performance, with body effect and poststress variations significantly impacting both transistor and circuit performance.

IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT (2021)

添加到收藏夹

Article Engineering, Electrical & Electronic

On the Understanding of pMOS NBTI Degradation in Advance Nodes: Characterization, Modeling, and Exploration on the Physical Origin of Defects

Yongkang Xue, Pengpeng Ren, Junjie Wu, Zhuyou Liu, Shuying Wang, Yu Li, Zirui Wang, Zixuan Sun, Da Wang, Yichen Wen, Shiyu Xia, Lining Zhang, Jianfu Zhang, Zhigang Ji, Junwei Luo, Huixiong Deng, Runsheng Wang, Lianfeng Yang, Ru Huang

Summary: A complete separation flow for different types of traps is achieved, allowing the modeling and characterization of different traps separately by simple experiments. A unified aging prediction framework is proposed by modeling each type of trap respectively and its long-term predictive capability is experimentally verified under various working conditions. The contribution of each trap to degradation is discussed, which is helpful for Design-Technology co-optimization (DTCO) in advanced nodes.

IEEE TRANSACTIONS ON ELECTRON DEVICES (2023)

添加到收藏夹

Article Engineering, Electrical & Electronic

Recovery Behavior of Interface Traps After Negative Bias Temperature Instability Stress in p-FinFETs Featuring Fast Trap Characterization Technique

Longda Zhou, Qingzhu Zhang, Hong Yang, Zhigang Ji, Guilei Wang, Qianqian Liu, Bo Tang, Rui Gao, Eddy Simoen, Huaxiang Yin, Chao Zhao, Anyan Du, Jun Luo, Wenwu Wang

Summary: This experimental study observed an immediate recovery of generated interface traps (N-IT) in Si p-FinFETs within a recovery time of 400 μs, which is attributed to the accumulation of hydrogen atoms. Additionally, the widely reported delayed recovery after Mode-B ac stress is observed when the accumulated hydrogen atoms in a pulse-on phase are quickly consumed in the following pulse-off phase.

IEEE TRANSACTIONS ON ELECTRON DEVICES (2021)

添加到收藏夹

Article Engineering, Electrical & Electronic

Improving Hot Carrier Reliability of Organic-TFTs by Extended Electrode

Wei-Chun Hung, Jia-Hong Lin, Ting-Chang Chang, Yu-Zhe Zheng, Yang-Hao Hung, Yu-An Chen, Li-Wen Wang, Chia-Hung Tsai, Simon Ogier

Summary: This study investigates the impact of source-drain-gate electrode overlap geometry on the reliability of organic thin-film transistors (OTFTs). The degradation of electrical characteristics after stress-induced hot carrier instability (HCI) is analyzed by comparing I-D-V-G transfer curves and C-V characteristic curves before and after the stress test. Severe degradation is observed in standard symmetry and source-extended structures, but increased reliability is observed in a drain-extended structure. A physical model is proposed to explain this behavior, and Technology Computer-Aided Design (TCAD) simulations are used for further understanding of the electrical field distribution in the devices.

IEEE ELECTRON DEVICE LETTERS (2023)

添加到收藏夹

Article Engineering, Electrical & Electronic

Power-Efficient CMOS Cellular RF Receivers for Carrier Aggregation According to RF Front-End Configuration

Youngmin Kim, Junghwan Han, Jae-Seung Lee, Taehwan Jin, Pilsung Jang, Heeseon Shin, Jongwoo Lee, Thomas Byunghak Cho

Summary: This article discusses power-efficient RF receiver designs for advanced LTE cellular applications, which can support multiple-channel RF signals with flexibility in various CMOS technologies. Different LNA topologies are used to achieve different bandwidth handling capabilities and linearity requirements.

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES (2021)

添加到收藏夹

Article Engineering, Electrical & Electronic

Nonconducting RF and DC Hot Carrier Stresses in 14/16-nm FinFETs for RF Power Amplifiers

Xuewei Ding, Guofu Niu, Huilong Zhang, Weike Wang, Kimihiko Imura, Fa Foster Dai

Summary: Hot carrier reliability is measured and modeled on 14/16-nm FinFETs used for RF PAs under nonconducting (NC) RF and dc stresses. The impact of stress on I - V and RF parameters is examined, revealing that degradations are located near the drain end of the channel within the pinch-off region. Measurement-based lifetime modeling is necessary as the quasi static-approximation (QSA) significantly underestimates degradation for classic V-gs = 0 V OFF-state RF stress. Die-to-die variations dominated by variations of the subthreshold channel current are observed at near-threshold V-gs, and the modeling shows that the near-threshold RF stress is approximately quasi-static. These FinFETs provide sufficient margins against NC RF stress for intended PA applications.

IEEE TRANSACTIONS ON ELECTRON DEVICES (2023)

添加到收藏夹

Article Engineering, Electrical & Electronic

NBTI Mitigation by Optimized HKMG Thermal Processing in a FinFET Technology

Bin Ye, Yi Gu, Hang Xu, Chengkang Tang, Hao Zhu, Qingqing Sun, David Wei Zhang

Summary: This study demonstrates an experimental approach to mitigate the negative bias temperature instability (NBTI) in 14-nm FinFET devices through HKMG thermal processing optimization. The NBTI reliability degradation is found to be caused by the formation of defective SiO ₂ interlayer and interface traps. The optimized post-dielectric and post-Si-cap annealing processes successfully achieve an improved balance between SiO ₂ interlayer quality and high-k/SiO ₂ interface trap density, effectively suppressing NBTI-induced device variations.

IEEE TRANSACTIONS ON ELECTRON DEVICES (2022)

添加到收藏夹

Article Computer Science, Hardware & Architecture

Aging-Aware Timing Model of CMOS Inverter: Path Level Timing Performance and Its Impact on the Logical Effort

Lomash Chandra Acharya, Arvind Kumar Sharma, Neeraj Mishra, Khoirom Johnson Singh, Mahipal Dargupally, Nayakanti Sai Shabarish, Ajoy Mandal, Venkatraman Ramakrishnan, Sudeb Dasgupta, Anand Bulusu

Summary: A static timing analysis methodology based on an effective current source model (ECSM) is proposed for estimating the aging-aware path-level timing performance and its impact on the logical effort of a CMOS inverter. The methodology utilizes device-level variation aware timing models to represent threshold-crossing points in an ECSM.libs file. A python-based tool is developed to estimate the path-level timing performance in pre-and post-stress conditions. The proposed model reduces the number of SPICE/Stress simulations by 98.13% compared to previous simulation-based techniques.

IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS (2023)

添加到收藏夹

Article Nanoscience & Nanotechnology

CMOS-Compatible Broad-Band Hot Carrier Photodetection with Cu-Silicon Nanojunctions

Yajin Dong, Jiaxiang Li, Wenyue Liang, Xianghong Nan, Long Wen, Qin Chen

Summary: Copper-silicon heterojunctions show higher responsivity and longer cutoff wavelength compared to gold-silicon heterojunctions in the sub-bandgap wavelength range of silicon. The advanced photodetection performance of copper-silicon devices is attributed to the relatively higher electron density of state above the Fermi level and the higher ejection probability.

ACS PHOTONICS (2022)

添加到收藏夹

Article Engineering, Electrical & Electronic

Analysis of Traps Behavior Related to Body-Biased Hot Carrier Degradation in 14 nm nFinFETs

Xianghui Li, Chengkang Tang, Yi Gu, Xin Chao, Chen Wang, Hao Zhu, Qingqing Sun, David Wei Zhang

Summary: In this study, the relationship between interface and oxide traps and body-biased hot carrier degradation (HCD) in 14 nm nFinFETs is investigated. It is observed that the device performance degradation accelerates as the body bias voltage increases. Particularly, the interface traps exhibit a rapid response even at low body bias levels, while the oxide traps only increase above a certain body bias threshold. The location and characteristics of the newly generated traps are analyzed, and a comprehensive analysis of the corresponding carrier transportation mechanism is built based on the trap location.

IEEE TRANSACTIONS ON ELECTRON DEVICES (2023)

添加到收藏夹

Article Materials Science, Multidisciplinary

Body Bias Dependence of Bias Temperature Instability (BTI) in Bulk FinFET Technology

Jiayang Zhang, Zirui Wang, Runsheng Wang, Zixuan Sun, Ru Huang

Summary: This article experimentally studies the influence of body bias dependence on the bias temperature instability (BTI) in bulk FinFETs, under different test conditions for the first time. It is observed that contrary to the traditional understanding, body bias actually has a non-negligible impact on BTI degradation in FinFETs, and a forward body bias (FBB) can reduce the BTI degradation, which is opposite to the trend in planar devices. These findings are important for understanding and modeling reliability in FinFETs.

ENERGY & ENVIRONMENTAL MATERIALS (2022)

添加到收藏夹

Article Materials Science, Coatings & Films

Low temperature thin films for next-generation microelectronics (invited)

Jurriaan Schmitz

SURFACE & COATINGS TECHNOLOGY (2018)

添加到收藏夹

Article Materials Science, Multidisciplinary

Inherently area-selective hot-wire assisted atomic layer deposition of tungsten films

Mengdi Yang, Antonius A. I. Aarnink, Jurriaan Schmitz, Alexey Y. Kovalgin

THIN SOLID FILMS (2018)

添加到收藏夹

Article Engineering, Electrical & Electronic

Toward GHz Switching in SOI Light Emitting Diodes

Vidhu Puliyankot, Giulia Piccolo, Raymond J. E. Hueting, Jurriaan Schmitz

IEEE TRANSACTIONS ON ELECTRON DEVICES (2018)

添加到收藏夹

Article Physics, Applied

Charge carrier transport and electroluminescence in atomic layer deposited poly-GaN/c-Si heterojunction diodes

Gaurav Gupta, Sourish Banerjee, Satadal Dutta, Antonius A. I. Aarnink, Jurriaan Schmitz, Alexey Y. Kovalgin, Raymond J. E. Hueting

JOURNAL OF APPLIED PHYSICS (2018)

添加到收藏夹

Article Engineering, Electrical & Electronic

Towards understanding recovery of hot-carrier induced degradation

Maurits J. de Jong, Cora Salm, Jurriaan Schmitz

MICROELECTRONICS RELIABILITY (2018)

添加到收藏夹

Article Materials Science, Multidisciplinary

How hot is the wire: Optical, electrical, and combined methods to determine filament temperature

Arnoud J. Onnink, Jurriaan Schmit, Alexey Y. Kovalgin

THIN SOLID FILMS (2019)

添加到收藏夹

Article Engineering, Electrical & Electronic

Recovery after hot-carrier injection: Slow versus fast traps

Maurits J. de Jong, Cora Salm, Jurriaan Schmitz

MICROELECTRONICS RELIABILITY (2019)

添加到收藏夹

Article Engineering, Electrical & Electronic

On the Accuracy of the Cox-Strack Equation and Method for Contact Resistivity Determination

Milou van Rijnbach, Raymond J. E. Hueting, Maciej Stodolny, Gaby Janssen, Jimmy Melskens, Jurriaan Schmitz

IEEE TRANSACTIONS ON ELECTRON DEVICES (2020)

添加到收藏夹

Article Engineering, Manufacturing

Conduction and Electric Field Effect in Ultra-Thin Tungsten Films

Kees van der Zouw, Antonius A. I. Aarnink, Jurriaan Schmitz, Alexey Y. Kovalgin

IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING (2020)

添加到收藏夹

Article Engineering, Electrical & Electronic

Interface States Characterization of UTB SOI MOSFETs From the Subthreshold Current

Matthias L. Vermeer, Raymond J. E. Hueting, Luca Pirro, Jan Hoentschel, Jurriaan Schmitz

Summary: Quantification of interface traps in double-gate fully depleted silicon-on-insulator transistors is crucial for accurate device modeling and technology development. A new method combining the g(m)/I-D method and a revised form of the k-sweep method was developed in this study, resulting in a typical trap density of 2*10^(11)cm^(-2)eV^(-1). However, the allocation of traps to the front or back interface is challenging, with at least a 20% error reported.

IEEE TRANSACTIONS ON ELECTRON DEVICES (2021)

添加到收藏夹

Review Green & Sustainable Science & Technology

Potential induced degradation of CIGS PV systems: A literature review

Pelin Yilmaz, Jurriaan Schmitz, Mirjam Theelen

Summary: This review paper provides an overview of studies on Potential Induced Degradation (PID) in copper indium gallium diselenide (CIGS) photovoltaics, including observations, proposed origins, testing methods, and preventive measures. Studies on cells, minimodules, and modules are presented and compared.

RENEWABLE & SUSTAINABLE ENERGY REVIEWS (2022)

添加到收藏夹

Review Green & Sustainable Science & Technology

Review of degradation and failure phenomena in photovoltaic modules

M. Aghaei, A. Fairbrother, A. Gok, S. Ahmad, S. Kazim, K. Lobato, G. Oreski, A. Reinders, J. Schmitz, M. Theelen, P. Yilmaz, J. Kettle

Summary: This article reviews the latest knowledge on the reliability of PV modules, including reliability metrics, stress factors, degradation, and failure modes. By analyzing the degradation and failure phenomena, strategies can be developed to improve the operational lifetime of PV systems and reduce the cost of electricity.

RENEWABLE & SUSTAINABLE ENERGY REVIEWS (2022)

添加到收藏夹

Review Energy & Fuels

Inaccuracies in contact resistivity from the Cox-Strack method: A review

Bas van Wijngaarden, Junchun Yang, Jurriaan Schmitz

Summary: This paper reviews literature published from 2017 to 2021 on the Cox-Strack method for contact resistivity determination in photovoltaic cell engineering. It analyzes possible inaccuracies in the method and suggests that more than half of the reviewed articles may require additional analysis for accurate quantification of lower contact resistance values. The paper concludes with recommendations for improving the Cox-Strack methodology.

SOLAR ENERGY MATERIALS AND SOLAR CELLS (2022)

添加到收藏夹

Proceedings Paper Engineering, Electrical & Electronic

RFID Tag Failure After Thermal Overstress

Emre Ozturk, Mike J. Dikkers, Kevin M. Batenburg, Cora Salm, Jurriaan Schmitz

2019 IEEE INTERNATIONAL INTEGRATED RELIABILITY WORKSHOP (IIRW) (2019)

添加到收藏夹

Proceedings Paper Engineering, Electrical & Electronic

Electrical characterization of hot-wire assisted atomic layer deposited Tungsten films

Kees van der Zouw, Antonius A. I. Aarnink, Jurriaan Schmitz, Alexey Y. Kovalgin

2019 IEEE 32ND INTERNATIONAL CONFERENCE ON MICROELECTRONIC TEST STRUCTURES (ICMTS) (2019)

添加到收藏夹

暂无数据

© Peeref 2019-2024. All rights reserved.