期刊
IEEE TRANSACTIONS ON ELECTRON DEVICES
卷 55, 期 1, 页码 337-342出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2007.911094
关键词
amorphous silicon (a-Si); metal-semiconductor-metal (MSM) devices; photoconducting devices; photodetectors
Photoconductor-type photodetectors are attractive as sensors due to their compatibility with thin-film-transistor (TFT) fabrication processes. Since they exhibit photogain, photoconductor detectors have better or comparable responsivity and quantum efficiency (QE) compared to p-i-n photodiodes. In this paper, the operation of metal-semiconductor-metal photoconductor-based photodetectors using aluminum electrodes and thin hydrogenated amorphous-silicon (a-Si) films is investigated. The experimental results of photocurrent measurements, as well as the responsivity and QE for different a-Si film thicknesses, bias voltages, and electrode gaps, are presented. Integration with TFT fabrication and its application in large-area digital imaging are discussed.
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