Article
Chemistry, Multidisciplinary
Santanu Jana, Rodrigo Martins, Elvira Fortunato
Summary: An exceptional feature of one-dimensional threadlike assemblies of a four-monolayer colloidal CdSe nanoplatelet-based thin-film transistor is reported. The study shows that the length of the threads affects the mobility, with the film containing the longest threads exhibiting the highest conductivity and electron mobility. The mobility trends are driven by the lower defects in the longer threads, resulting in less loss of electron hopping.
Article
Engineering, Electrical & Electronic
Tribeni Borthakur, Ranjit Sarma
Summary: In this study, MoO3 transition metal oxide layer was used as the source-drain electrode for pentacene-based organic thin-film transistors (OTFTs). The OTFT device with oxidized MoO3/Au bilayer source-drain electrode exhibited better performance compared to other devices.
JOURNAL OF ELECTRONIC MATERIALS
(2022)
Article
Polymer Science
Muhammad Shoaib Bhutta, Shakeel Akram, Pengfei Meng, Jerome Castellon, Serge Agnel, Hui Li, Yecai Guo, Ghulam Rasool, Shahid Hussain, Muhammad Tariq Nazir
Summary: The study observed steady-state electrical conduction current for single and multilayer polyimide (PI) nanocomposite films at different temperatures, finding that the dominant conduction mechanisms were space charge limited current (SCLC) and Poole-Frenkel current. At high electric fields, ohmic conduction was replaced by current-voltage dependency. Nanocomposite films exhibited higher conduction current at lower temperatures, but it declined at higher temperatures.
Article
Engineering, Electrical & Electronic
Ankit Verma, V. N. Mishra, Rajiv Prakash
Summary: In this article, a self-aligned, cost-efficient, fully solution-processed, and low-voltage operated high-k dielectric-based p-channel organic thin-film transistor (OTFT) has been developed and investigated for toxic ammonia analyte at room temperature. The study reveals that this novel low-voltage OTFT device is capable of operating at -2 V and has shown a high sensitivity toward ammonia gas detection at RT.
IEEE SENSORS JOURNAL
(2023)
Article
Engineering, Electrical & Electronic
Ankit Verma, V. N. Mishra, Rajiv Prakash
Summary: In this study, a self-aligned, cost-efficient, fully solution-processed, and low-voltage operated high-k dielectric-based p-channel organic thin-film transistor (OTFT) was developed for toxic ammonia analyte detection at room temperature. The OTFT sensor showed a high response rate of 47% at 5 ppm NH3 analyte and a low detection limit of 11.65 ppb. The developed sensor exhibited stable performance independent of relative humidity variations in the range of 30%-70%. The study demonstrates the capability of this novel low-voltage OTFT device to detect ammonia gas at room temperature.
IEEE SENSORS JOURNAL
(2023)
Article
Engineering, Electrical & Electronic
Toshiyuki Oishi, Tomohiro Otsuka, Masaya Tabuchi, Yutaro Yamaguchi, Shintaro Shinjo, Koji Yamanaka
Summary: In this study, a model for the peak frequency in the imaginary part of Y-22 based on bias for GaN HEMTs was investigated, taking into account both self-heating and Poole-Frenkel effects. The model successfully matched experimental data for a wide range of transistor biases.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2021)
Article
Chemistry, Physical
Bochang Li, P. T. Lai, W. M. Tang
Summary: The channel length has an impact on the sensing performance of the hydrogen sensor based on OTFT, with smaller channel lengths resulting in lower carrier mobility. The compressive strain in the channel region increases with decreasing channel length, leading to a larger reduction in carrier mobility and higher sensitivity to hydrogen caused by hydrogen-induced expansion of the S/D electrodes. Furthermore, the response and recovery times of the sensor are mainly controlled by the diffusion of hydrogen atoms in the S/D electrodes, and are hardly affected by the channel length.
INTERNATIONAL JOURNAL OF HYDROGEN ENERGY
(2021)
Article
Engineering, Electrical & Electronic
P. Vigneshwara Raja, Vaidehi Vijay Painter, Emmanuel Dupouy, Raphael Sommet, Jean-Christophe Nallatamby
Summary: This work estimates the zero-field activation energy of traps in InAlN/GaN and AlN/GaN HEMTs by incorporating self-heating and Poole-Frenkel effects in the emission rate equation. The HEMT thermal resistance is computed from TCAD simulation results and the channel temperature increase caused by self-heating is included in the Arrhenius plot. The apparent trap activation energy is calculated from measured parameters at different drain voltages and the electric field at each bias condition is extracted from simulation.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2023)
Article
Materials Science, Multidisciplinary
Yachen Li, Luis Portilla, Chaewon Kim
Summary: The intrinsic gain is a key metric in analog electronics, and research shows that it does not have much correlation with the mobility and contact resistance, but decreases as the channel length decreases, the gate voltage increases, and the thickness of the active layer decreases.
ELECTRONIC MATERIALS LETTERS
(2021)
Article
Engineering, Electrical & Electronic
Ankit Verma, Shipra Gupta, V. N. Mishra, Rajiv Prakash
Summary: This study focuses on the fabrication and characterization of a low-voltage, flexible organic thin film transistor (OTFT) for ammonia sensing. The device utilizes a hybrid dielectric layer and a polymer/2-D nanocomposite as the gate oxide and active layer respectively. The results show that the fabricated device has good electrical characteristics and can detect ammonia gas at low concentrations.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2023)
Article
Engineering, Electrical & Electronic
Bochang Li, P. T. Lai, W. M. Tang
Summary: This study investigates the effects of source/drain catalytic metal and fabrication method on the characteristics of an organic thin-film transistor-based hydrogen sensor. The results show that Pd has the highest sensitivity, while Ni has the lowest sensitivity.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2022)
Article
Nanoscience & Nanotechnology
Zhengran Yi, Yongkun Yan, Hanlin Wang, Wenhao Li, Kaiqing Liu, Yan Zhao, Guangxin Gu, Yunqi Liu
Summary: This study introduces a synthesis strategy called chain-extending polymerization to design polymer semiconductors and demonstrates its superiority over the conventional synthesis strategy of one-pot polymerization. By utilizing this novel strategy, PDPPTT-vinylene polymers with enhanced charge mobilities and significant crystallization are obtained, achieving the required performance for organic circuits.
ACS APPLIED MATERIALS & INTERFACES
(2022)
Article
Chemistry, Physical
Yuan Li, Ai Fu, Guangzheng Yi
Summary: This study provides a computational investigation into the charge transport mechanism in two-dimensional covalent organic frameworks (2D COFs). The results reveal that the electron mobility in a C2N-h2D monolayer follows a power-law behavior with temperature, indicating the presence of band transport at both low and high temperatures. Unusual phonon scatterings of electrons are found to be determined by optical phonons rather than acoustic phonons at room temperature.
JOURNAL OF PHYSICAL CHEMISTRY C
(2022)
Article
Engineering, Electrical & Electronic
Yining Yu, Nannan Lv, Dongli Zhang, Yiran Wei, Mingxiang Wang
Summary: The letter discusses how the carrier mobility of amorphous InGaZnO thin-film transistors was enhanced by introducing nitrogen and forming Zn3N2, with a saturation field-effect mobility of 61.6 cm(2)/Vs. However, annealing at 400 degrees C led to a decrease in mobility to 4.1 cm(2)/Vs due to the formation of defective ZnxNy. Additionally, the enhanced mobility of a-IGZO TFTs did not exhibit persistent photoconductivity behavior, making them suitable for functional circuits in active-matrix displays.
IEEE ELECTRON DEVICE LETTERS
(2021)
Article
Optics
Shijie Jiang, Lurong Yang, Chenbo Huang, Qianqian Chen, Wei Zeng, Xiaojian She
Summary: Thin film transistor (TFT) is crucial for planar drive display technology, and operating the TFT device in a saturation regime is essential for stable light emission. This study investigates the effect of illumination on TFT saturation behavior, revealing that the drift current of photogenerated carriers can exhibit saturation behavior depending on the dominance of charges induced by gate bias or charges generated by photons. These insights contribute to the development of TFT technologies that can drive light emission at a stable current.
