期刊
IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY
卷 14, 期 3, 页码 844-848出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TDMR.2014.2331980
关键词
SiGe HBT; Silicon-Germanium (SiGe) BiCMOS; total ionizing dose (TID); proton irradiation; radiation; Silicon-Germanium (SiGe); shallow trench isolation (STI); Europa; saturation; turn-around; dose-enhancement
资金
- NASA SBIR
- NSF Graduate Research Fellowship Program [DGE-1148903]
The total ionizing dose response of both CMOS transistors and SiGe HBTs implemented without utilizing any radiation hardening by design techniques in Jazz Semiconductor's SBC-18-HXL BiCMOS technology platform is evaluated. The SiGe HBTs remain functional up to the 6 Mrad(SiO2) dose levels needed to support multi-Mrad exploration missions such as NASA's Europa mission. The CMOS devices are also functional to this extreme total dose. The nFETs exhibit significantly reduced shallow trench isolation leakage compared with nFETs implemented in prior SiGe BiCMOS processes. Both nFETs and pFETs show negligible transconductance and on-current degradation. We conclude that this SiGe process technology is a potential candidate for implementing reliable and survivable multi-Mrad total ionizing dose-hard electronic systems.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据