期刊
IEEE SENSORS JOURNAL
卷 10, 期 4, 页码 893-899出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JSEN.2009.2034861
关键词
Gas sensors; porous silicon; CMOS-compatibility
The compatibility of a recently proposed porous silicon formation procedure for gas sensor integration with a commercial microelectronic process is analyzed. Porous silicon-based gas sensors have been produced on a test chip by means of a post-processing approach that enables silicon anodization in selected areas. The effects of the post-processing procedure on electronic circuits, integrated on the test chip as the sensors, have been investigated by electrical measurements. Critical electrical parameters of purposely-designed high-performance analog cells have been measured on several post-processed and not post-processed samples. Experimental outcomes demonstrate the actual compatibility of the post-processing procedure for porous silicon formation with commercial microelectronic processes.
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