期刊
IEEE SENSORS JOURNAL
卷 9, 期 9, 页码 1084-1090出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JSEN.2009.2025581
关键词
CMOS; fluorescence lifetime; single-photon avalanche diode (SPAD); time-gating
A single-photon avalanche diode-based pixel array for the analysis of fluorescence phenomena is presented. Each 180 x 150 mu m(2) pixel integrates a single photon detector combined with an active quenching circuit and a 17-bit digital events counter. On-chip master logic provides the digital control phases required by the pixel array with a full programmability of the main timing synchronisms. The pixel exhibits an average dark count rate of 3 kcps and a dynamic range of over 120-dB in time uncorrelated operation. A complete characterization of the single photon avalanche diode characteristics is reported. Time-resolved fluorescence measurements have been demonstrated by detecting the fluorescence decay of quantum-dot samples without the aid of any optical filters for excitation laser light cutoff.
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