期刊
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS
卷 21, 期 7, 页码 368-370出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LMWC.2011.2143701
关键词
Coplanar waveguide (CPW); high electron mobility transistor (HEMT); low noise amplifier (LNA); millimeter-wave (MM-Wave); monolithic microwave integrated circuit (MMIC); sub-millimeter wave
资金
- DARPA
- Army Research Laboratory under the DARPA [HR0011-09-C-0062]
In this letter, low noise amplification at 0.67 THz is demonstrated for the first time. A packaged InP High Electron Mobility Transistor (HEMT) amplifier is reported to achieve a noise figure of 13 dB with an associated gain greater than 7 dB at 670 GHz using a high f(MAX) InP HEMT transistors in a 5 stage coplanar waveguide integrated circuit. A 10-stage version is also reported to reach a peak gain of 30 dB. These results indicate that InP HEMT integrated circuits can be useful at frequencies approaching a terahertz.
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