4.6 Article Proceedings Paper

A CMOS High-Power Broadband 260-GHz Radiator Array for Spectroscopy

期刊

IEEE JOURNAL OF SOLID-STATE CIRCUITS
卷 48, 期 12, 页码 3090-3104

出版社

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JSSC.2013.2272864

关键词

CMOS; EIRP; harmonic oscillator; on-chip slot antenna; self feeding; signal source; silicon lens; spectroscopy; terahertz

资金

  1. C2S2 Focus Center under the Focus Center Research Program (FCRP)
  2. Semiconductor Research Corporation (SRC) entity
  3. National Science Foundation (NSF)

向作者/读者索取更多资源

A high-power broadband 260-GHz radiation source using 65-nm bulk CMOS technology is reported. The source is an array of eight harmonic oscillators with mutual coupling through four 130-GHz quadrature oscillators. Based on a novel self-feeding structure, the harmonic oscillator simultaneously achieves the optimum conditions for the fundamental oscillation and the 2nd-harmonic generation. The signals at 260 GHz radiate through eight on-chip slot antennas, and are in-phase combined inside a hemispheric silicon lens attached at the backside of the chip. Similar to the laser pulse-driven photoconductive emitter in many THz spectrometers, the radiation of this source can also be modulated by narrow pulses generated on chip, which achieves broad radiation bandwidth. Without modulation, the chip achieves a measured continuous-wave radiated power of 1.1 mW, and an EIRP of 15.7 dBm. Under modulation, the measured bandwidth of the source is 24.7 GHz. This radiator array consumes 0.8-W DC power from a 1.2-V supply.

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