4.6 Article

A CMOS-Microfluidic Chemiluminescence Contact Imaging Microsystem

期刊

IEEE JOURNAL OF SOLID-STATE CIRCUITS
卷 47, 期 11, 页码 2822-2833

出版社

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JSSC.2012.2214182

关键词

Active-reset technique; chemiluminescence (CL); CMOS image sensor; contact imaging; dark current; electrochemiluminescence (ECL); electroless nickel-gold plating; in-pixel flicker noise cancellation; microfluidics; subthreshold leakage; two-transistor reset path

资金

  1. Ontario Center of Excellence (OCE)
  2. Natural Sciences and Engineering Research Council of Canada (NSERC)
  3. Canada Foundation for Innovation (CFI)

向作者/读者索取更多资源

A hybrid CMOS-microfluidic microsystem for chemiluminescence and electrochemiluminescence-based biochemical sensing is presented. The microsystem integrates a two-layer soft polymer microfluidic network and a CMOS imager fabricated in a standard 0.35-mu m technology. The CMOS imager consists of a 64 x 128-pixel array interdigitated with a 32 x 64 electrolessly plated nickel-gold microelectrode array. A two-transistor reset path technique attenuates the subthreshold leakage current of the reset transistor which constitutes a significant portion of the dark current. An active reset technique, in-pixel flicker noise cancellation, and pixel binning contribute to noise reduction. The imager achieves a low dark current of 3.6 nA/cm(2) for photodiode reset voltages as high as 2.3 V, noise of 110 mu Vrms with maximum time of photon integration of 90 s, and a dynamic range of 67.8 dB. The CMOS-microfluidic microsystem is validated in on-chip chemiluminescence and electrochemiluminescence detection of luminol.

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