A 32-Gb MLC NAND Flash Memory With Vth Endurance Enhancing Schemes in 32 nm CMOS

出版年份 2010 全文链接

标题

作者

关键词

出版物

Volume 46, Issue 1, Pages 97-106

出版商

Institute of Electrical and Electronics Engineers (IEEE)

发表日期

2010-12-01

DOI

10.1109/jssc.2010.2084450

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