A 90 nm 1.8 V 512 Mb Diode-Switch PRAM With 266 MB/s Read Throughput

标题

作者

关键词

出版物

IEEE JOURNAL OF SOLID-STATE CIRCUITS

Volume 43, Issue 1, Pages 150-162

出版商

Institute of Electrical and Electronics Engineers (IEEE)

发表日期

2008-01-30

DOI

10.1109/jssc.2007.908001

向作者/读者发起求助以获取更多资源

Publish scientific posters with Peeref

Peeref publishes scientific posters from all research disciplines. Our Diamond Open Access policy means free access to content and no publication fees for authors.

Learn More

Create your own webinar

Interested in hosting your own webinar? Check the schedule and propose your idea to the Peeref Content Team.

Create Now

IEEE JOURNAL OF SOLID-STATE CIRCUITS

向作者/读者发起求助以获取更多资源

Protocol

Reagent

Reprint

Publish scientific posters with Peeref

Create your own webinar