期刊
IEEE JOURNAL OF SOLID-STATE CIRCUITS
卷 43, 期 10, 页码 2206-2217出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JSSC.2008.2002934
关键词
Automotive radar; correlation; Doppler radar; low-noise amplifiers; millimeter-wave imaging; noise figure; phase noise; power amplifiers; SiGe HBT; W-band transceivers
This paper presents the first single-chip direct-conversion 77-85 GHz transceiver fabricated in SiGe HBT technology, intended for Doppler radar and millimeter-wave imaging, particularly within the automotive radar band of 77-81 GHz. A 1.3 onto x 0.9 mm 86-96 GHz receiver is also presented. The transceiver, fabricated in a 130 nm SiGe HBT technology with f(T)/f(MAX) Of 230/300 GHz, consumes 780 mW, and occupies 1.3 mm x 0.9 mm of die area. Furthermore, it achieves 40 dB conversion gain in the receiver at 82 GHz, a 3 dB bandwidth extending from 77 to 85 GHz at 25 degrees C, and covering the entire 77-81 GHz band up to 100 degrees C, record 3.85 dB DSB noise figure measured at 82 GHz LO and 1 GHz IF, and an IP1dB of -35 dBm. The transmitter provides + 11.5 dBm of saturated output power at 77 GHz, and a divided by 64 static frequency divider is included on-die. Successful detection of a Doppler shift of 30 Hz at a range of 6 m is shown. The 86-96 GHz receiver achieves 31 dB conversion gain, a 3 dB bandwidth of 10 GHz, and 5.2 dB DSB noise figure at 96 GHz LO and I GHz IF, and -99 dBc/Hz phase noise at 1 MHz offset. System-level layout and integration techniques that address the challenges of low-voltage transceiver implementation are also discussed.
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