4.7 Article

Terahertz-Wave Generation Using Graphene: Toward New Types of Terahertz Lasers

出版社

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JSTQE.2012.2208734

关键词

Carrier-phonon interaction; current injection; graphene; solid-state laser; terahertz (THz)

资金

  1. Japan Science and Technology Agency CREST
  2. Japan Society for the Promotion of Science (JSPS)
  3. JSPS Core-to-Core
  4. JSPS JPN-RUS program
  5. National Science Foundation Partnerships for International Research and Education Nano-Japan
  6. Russian Foundation for Basic Research Russian Academy of Sciences
  7. Grants-in-Aid for Scientific Research [23000008, 23760300] Funding Source: KAKEN

向作者/读者索取更多资源

This paper reviews recent advances in terahertz-wave generation in graphene toward the creation of new types of terahertz lasers. First, fundamental basis of the optoelectronic properties of graphene is introduced. Second, nonequilibrium carrier relaxation or recombination dynamics in optically or electrically pumped graphene is described to introduce a possibility of negative dynamic conductivity in a wide terahertz range. Third, recent theoretical advances toward the creation of current-injection graphene terahertz lasers are described. Fourth, unique terahertz dynamics of the 2-D plasmons in graphene are described. Finally, the advantages of graphene materials and devices for terahertz-wave generation are summarized.

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