InAs/GaAs Quantum-Dot Lasers Monolithically Grown on Si, Ge, and Ge-on-Si Substrates

标题
InAs/GaAs Quantum-Dot Lasers Monolithically Grown on Si, Ge, and Ge-on-Si Substrates
作者
关键词
-
出版物
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
Volume 19, Issue 4, Pages 1901107-1901107
出版商
Institute of Electrical and Electronics Engineers (IEEE)
发表日期
2013-02-21
DOI
10.1109/jstqe.2013.2247979

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