期刊
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
卷 17, 期 4, 页码 1112-1129出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JSTQE.2010.2068280
关键词
Field-effect transistor (FET); III-V on Si; light-emitting diode (LED); metal-organic vapor phase epitaxy (MOVPE); nanowires (NWs); selective-area growth (SAG)
资金
- Ministry of Education, Culture, Sports, Science and Technology, Japan
- Precursory Research for Embryonic Science and Technology (PRESTO), Japan Science and Technology Agency
- Grants-in-Aid for Scientific Research [23221007, 23360129] Funding Source: KAKEN
III-V nanowires (NWs) on Si are promising building blocks for future nanoscale electrical and optical devices on Si platforms. We present position-controlled and orientation-controlled growth of InAs, GaAs, and InGaAs NWs on Si by selective-area growth, and discuss how to control growth directions of III-V NW on Si. Basic studies on III-V/Si interface showing heteroepitaxial growth with misfit dislocations and coherent growth without misfit dislocations are presented. Finally, we demonstrate the integrations of a III-V NW-based vertical surrounding-gate field-effect transistor and light-emitting diodes array on Si. These demonstrations could have broad applications in high-electron-mobility transistors, laser diodes, and photodiodes with a functionality not enabled by conventional NW devices.
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