Article
Chemistry, Physical
Benjamin T. Feleki, Ricardo K. M. Bouwer, Valerio Zardetto, Martijn M. Wienk, Rene A. J. Janssen
Summary: An efficient substrate-configuration p-i-n metal-halide perovskite solar cell is fabricated on a polymer-coated steel substrate. The optimized cell structure reaches a conversion efficiency close to that of the reference cell. The major optical losses come from several layers in the cell, especially the top ITO electrode and C60 layer.
ACS APPLIED ENERGY MATERIALS
(2022)
Article
Optics
Junyi Zhao, Li-Wei Lo, Zhibin Yu, Chuan Wang
Summary: Researchers have developed a versatile and eco-friendly handwriting approach for creating high-performance perovskite optoelectronic devices on various substrates, including paper, textiles, plastics, rubber and common 3D objects. The process involves using common ballpoint pens filled with specially formulated inks, enabling the rapid realization of multicolour perovskite light-emitting diodes and photodetectors. This work offers a new route for integrating perovskite optoelectronics in low-cost and large-area application scenarios.
Article
Energy & Fuels
Rodrigo Garcia-Rodriguez, Antonio J. Riquelme, Matthew Cowley, Karen Valadez-Villalobos, Gerko Oskam, Laurence J. Bennett, Matthew J. Wolf, Lidia Contreras-Bernal, Petra J. Cameron, Alison B. Walker, Juan A. Anta
Summary: A combination of experimental studies and drift-diffusion modeling is used to investigate the appearance of inverted hysteresis in perovskite solar cells. The influence of different parameters on hysteresis behavior is examined, and a drift-diffusion model is used to simulate the experimental trends. It is shown that the accumulation and depletion of ionic charge at the interfaces modify carrier transport and injection/recombination processes, leading to hysteresis.
Article
Multidisciplinary Sciences
Guixiang Li, Zhenhuang Su, Laura Canil, Declan Hughes, Mahmoud H. Aldamasy, Janardan Dagar, Sergei Trofimov, Luyao Wang, Weiwei Zuo, Jose J. Jeronimo-Rendon, Mahdi Malekshahi Byranvand, Chenyue Wang, Rui Zhu, Zuhong Zhang, Feng Yang, Giuseppe Nasti, Boris Naydenov, Wing C. Tsoi, Zhe Li, Xingyu Gao, Zhaokui Wang, Yu Jia, Eva Unger, Michael Saliba, Meng Li, Antonio Abate
Summary: Daily temperature variations challenge the stability of halide perovskites in solar cells. However, by using the ordered dipolar structure of beta-poly(1,1-difluoroethylene), we were able to stabilize the perovskite black phase and improve solar cell performance. Our p-i-n perovskite solar cells achieved a record power conversion efficiency of 24.6% and retained high efficiency after exposure to various temperatures and thermal cycling.
Article
Chemistry, Multidisciplinary
Dewu Yue, Xin Ju, Tao Hu, Ximing Rong, Xinke Liu, Xiao Liu, Hong Kuan Ng, Dongzhi Chi, Xinzhong Wang, Jing Wu
Summary: A lateral 2D WSe2 p-n homojunction with low contact resistance and high photoresponsivity was constructed using a plasma-treated doping method.
Article
Nanoscience & Nanotechnology
Shuaifeng Hu, Jorge Pascual, Wentao Liu, Tsukasa Funasaki, Minh Anh Truong, Shota Hira, Ruito Hashimoto, Taro Morishita, Kyohei Nakano, Keisuke Tajima, Richard Murdey, Tomoya Nakamura, Atsushi Wakamiya
Summary: Perovskite interfaces play a critical role in the performance of photovoltaic devices. In this study, the universality of perovskite top surface posttreatment with ethylenediammonium diiodide (EDAI2) for p-i-n devices was demonstrated. The treatment successfully improved the efficiency and stability of the devices, with enhancements in the open-circuit voltage. The versatility of this treatment makes it highly appealing for industrial application.
ACS APPLIED MATERIALS & INTERFACES
(2022)
Article
Physics, Applied
Xiangchun Zhao, Rongfeng Tang, Lijian Zhang, Chenhui Jiang, Weitao Lian, Xiaomin Wang, Wenhao Han, Chunyan Wu, Huanxin Ju, Tao Chen, Changfei Zhu
Summary: This study compares heterojunction configurations of Sb2S3 solar cells on different CdS substrates, finding that coaxial heterojunction can significantly improve carrier transport, increase fill factor, and reduce series resistance for efficient carrier transport.
JOURNAL OF PHYSICS D-APPLIED PHYSICS
(2021)
Article
Energy & Fuels
Marwa S. Salem, Mohamed Okil, Ahmed Shaker, Abdullah Albaker, Mansoor Alturki
Summary: Investigations into novel device architectures and interfaces that enhance charge transport and collection are necessary to increase the power conversion efficiency of Sb2Se3 solar cells. The study designs p-i-n and n-i-p structures using device simulations. The use of a double ETL structure improves electron transport, while a double HTL structure facilitates hole transport and achieves a proper valence band offset, resulting in higher efficiencies for both configurations.
JOURNAL OF PHYSICS-ENERGY
(2023)
Article
Chemistry, Multidisciplinary
Jing Zhuang, Peng Mao, Yigang Luan, Ningli Chen, Xiaofei Cao, Guosheng Niu, Feifei Jia, Fuyi Wang, Shaokui Cao, Jizheng Wang
Summary: Regulating the electron transport layer (ETL) using the cost-effective modification material rubidium fluoride (RbF) can enhance the electron mobility of SnO2 and suppress hysteresis in perovskite solar cells (PSCs). Double-sided passivated PSCs with RbF on the SnO2 surface and p-methoxyphenethylammonium iodide on the perovskite surface achieved an outstanding PCE result with a small V-oc deficit.
ADVANCED FUNCTIONAL MATERIALS
(2021)
Review
Chemistry, Multidisciplinary
Junwei Shi, Chenyu Zhao, Jianyu Yuan
Summary: Inverted p-i-n lead halide perovskite solar cells (PSCs) have great potential for commercialization and compatibility with silicon (Si) bottom devices. However, their fill factor (FF) currently underperforms compared to other parameters. This review article summarizes recent advancements in improving FF in inverted PSCs through interfacial optimization, precursor engineering, and fabrication techniques. Insufficient carrier extraction and transport efficiency are identified as the main factors hindering FF, and strategies for minimizing series resistance are discussed. Continued efforts to improve FF in high-performance inverted devices may lead to commercial applications of PSCs in the future.
Article
Chemistry, Multidisciplinary
Anastasia Yakusheva, Danila Saranin, Dmitry Muratov, Pavel Gostishchev, Hanna Pazniak, Alessia Di Vito, Thai Son Le, Lev Luchnikov, Anton Vasiliev, Dmitry Podgorny, Denis Kuznetsov, Sergey Didenko, Aldo Di Carlo
Summary: Interface engineering is a promising strategy for stabilizing perovskite solar cells. This study introduces a mixed composite interlayer between the electron-transport layer and the metal cathode, which slightly improves the power conversion efficiency and significantly enhances the stability of the solar cells.
Article
Chemistry, Multidisciplinary
Md Aslam Uddin, Prem Jyoti Singh Rana, Zhenyi Ni, Xuezeng Dai, Zhenhua Yu, Zhifang Shi, Haoyang Jiao, Jinsong Huang
Summary: This study reports a new method for the fabrication of highly efficient PSCs and modules in ambient conditions. The use of blade technique to prepare thin films with good conductivity, along with additives that enhance the coverage and dispersity of perovskite and PCBM, leads to superior efficiency and stability.
ADVANCED MATERIALS
(2022)
Article
Chemistry, Multidisciplinary
Lina Wang, Qizhen Song, Fengtao Pei, Yihua Chen, Jie Dou, Hao Wang, Congbo Shi, Xiao Zhang, Rundong Fan, Wentao Zhou, Zhiwen Qiu, Jiaqian Kang, Xueyun Wang, Andreas Lambertz, Mengru Sun, Xiuxiu Niu, Yue Ma, Cheng Zhu, Huanping Zhou, Jiawang Hong, Yang Bai, Weiyuan Duan, Kaining Ding, Qi Chen
Summary: This research presents a strain modulation strategy to fabricate light-stable perovskite/silicon tandem solar cells. By converting residual tensile strain to compressive strain, the cells achieve a high power conversion efficiency and improved light stability.
ADVANCED MATERIALS
(2022)
Review
Chemistry, Multidisciplinary
So Yeon Park, Kai Zhu
Summary: This article reviews the key advancements in SnO2 development for perovskite solar cells, including different deposition methods and surface treatment strategies to enhance its performance. The general materials chemistry of SnO2 and the associated challenges and improvement strategies are discussed, with a focus on its impact on device characteristics. The article also highlights the applications of SnO2 in scalable processes and flexible devices, and provides perspectives on the future development of large-scale perovskite solar modules.
ADVANCED MATERIALS
(2022)
Article
Energy & Fuels
Pei-Huan Lee, Ting-Tzu Wu, Chia-Feng Li, Damian Glowienka, Yu-Xuan Huang, Shih-Han Huang, Yu-Ching Huang, Wei-Fang Su
Summary: Two issues, including damage to the underlying absorber and low average near-infrared transmittance of transparent electrodes, are resolved by using a SnO2 layer as a protective and work function-modifying layer in fabricating four-terminal perovskite/silicon tandem solar cells.
Article
Automation & Control Systems
Juntian Qu, Renjie Wang, Peng Pan, Linghao Du, Zetian Mi, Yu Sun, Xinyu Liu
Summary: Nanomaterials possess superior properties and are suitable for various device applications. Nanomanipulation techniques under scanning electron microscopy (SEM) have enabled the testing of mechanical and electrical properties of nanomaterials. However, the seamless integration of mechanical, electrical, and optical testing techniques inside an SEM for multiphysical characterization of nanomaterials is still unexplored. In this work, a nanomanipulation system with integrated micro-photoluminescence setup is reported, and the effect of mechanical compression on the optoelectronic property of nanomaterials is revealed.
IEEE TRANSACTIONS ON AUTOMATION SCIENCE AND ENGINEERING
(2023)
Article
Optics
Sanju Shrestha, Ravi Teja Velpula, Bed Prasad Pandey, Mano Balo Sankar Muthu, Ngoc Thi Ai Nguyen, Hieu Pham Trung Nguyen
Summary: This study experimentally observed the temperature-dependent forward and reverse leakage current-voltage characteristics of InGaN/AlGaN nanowire-based red microLEDs. The voltage-dependent activation energy was found to be approximately twice as high in the case of forward bias compared to reverse bias, and in the high voltage regime, the magnitudes of these parameters were significantly larger for both biases. This study provides vital insights into the design and fabrication of high-performance nanowire-based LEDs.
Article
Physics, Applied
Ding Wang, Ping Wang, Shubham Mondal, Mingtao Hu, Danhao Wang, Yuanpeng Wu, Tao Ma, Zetian Mi
Summary: The thickness scaling behavior of ferroelectric Sc0.3Al0.7N films grown on Mo substrates by molecular beam epitaxy is reported. The switchable ferroelectricity in ScAlN films with thicknesses ranging from 100 to 5 nm is confirmed. The increase in coercive field and diminution of remnant polarization in films below 20 nm are closely related to surface oxidation and strain state in ultrathin ScAlN films.
APPLIED PHYSICS LETTERS
(2023)
Article
Nanoscience & Nanotechnology
Ravi Teja Velpula, Barsha Jain, Hieu Pham Trung Nguyen
Summary: This study systematically investigates the multilevel switching at low power in Ti/TiN/Ga2O3/Ti/Pt resistive random-access memory (RRAM) devices. The fabricated RRAM device shows an excellent non-overlapping window between set and reset voltages with a high R (off)/R (on) ratio. Moreover, the study demonstrates the multi-bit storage capability of these RRAM devices with high R (off)/R (on) ratio for the first time.
Article
Chemistry, Multidisciplinary
Thi Tuyet Doan, Thanh Quang Le, Boi An Tran, Tung Cao -Thanh Pham, Ravi Teja Velpula, Mano Bala Sankar Muthu, Hieu Pham Trung Nguyen, Quan Thi Hong Vu, Przemyslaw Jacek Deren, Hoang -Duy Nguyen
Summary: Red-emitting alumina nanophosphors doped with Mn4+ and Mg2+ (Al2O3:Mn4+, Mg2+) were synthesized using a hydrothermal method and Pluronic surfactant. The nanophosphors showed different phases depending on the annealed temperature, with cube-like nanoparticles observed at 500-1000°C. The phosphors exhibited strong red emission at 678 and 692 nm due to the transitions of Mn4+ ions, and displayed excellent waterproof ability and thermal stability. Combining the nanophosphors with InxGa(1-x)N nanowire chips, warm-white LEDs with high color rendering index and low correlated color temperature were achieved. The use of nanophosphors also improved the current-voltage characteristic of the LEDs.
Article
Nanoscience & Nanotechnology
Ping Wang, Ding Wang, Shubham Mondal, Mingtao Hu, Yuanpeng Wu, Tao Ma, Zetian Mi
Summary: Achieving ferroelectricity in III-nitride semiconductors by alloying with rare-earth elements, such as scandium, has opened up possibilities for next-generation electronic, acoustic, photonic, and quantum devices and systems. However, the integration of nitride semiconductors with the complementary metal oxide semiconductor (CMOS) technology has been hindered by the need for sapphire, Si, or SiC substrates. In this study, we demonstrate the growth of single-crystalline ferroelectric nitride semiconductors on CMOS compatible metal-molybdenum, enabling the realization of ferroelectric nitride semiconductors on polycrystalline molybdenum. Robust and wake-up-free ferroelectricity has been measured in the epitaxially grown ScAlN directly on metal, and a ferroelectric GaN/ScAlN heterostructure for synaptic memristor has been proposed and demonstrated, showing potential applications in neuromorphic computing.
ACS APPLIED MATERIALS & INTERFACES
(2023)
Article
Chemistry, Multidisciplinary
Ding Wang, Ping Wang, Shubham Mondal, Mingtao Hu, Yuanpeng Wu, Tao Ma, Zetian Mi
Summary: Computing in the analog regime using nonlinear ferroelectric resistive memory arrays can potentially alleviate the energy constraints and complexity/footprint challenges imposed by digital von Neumann systems. In this study, ferroelectric and analog resistive switching in an epitaxial nitride heterojunction comprised of ultrathin nitride ferroelectrics, specifically ScAlN, has been demonstrated. The results show high ON/OFF ratios, uniformity, retention, and cycling endurance, along with the capability for multistate operation and image processing.
ADVANCED MATERIALS
(2023)
Article
Physics, Applied
Yuanpeng Wu, Ping Wang, Woncheol Lee, Anthony Aiello, Parag Deotare, Theodore Norris, Pallab Bhattacharya, Mackillo Kira, Emmanouil Kioupakis, Zetian Mi
Summary: Both 2D TMDs and III-V semiconductors are potential platforms for quantum technology, but each with its limitations. 2D TMDs have a large exciton binding energy and customizable quantum properties, but compatibility issues with existing industrial processes. On the other hand, III-nitrides have been widely used in light-emitting devices and power electronics but lack exploitation of excitonic quantum aspects. Recent advancements in 2D III-nitrides have shown promise in achieving room-temperature quantum technologies.
APPLIED PHYSICS LETTERS
(2023)
Article
Physics, Applied
Ayush Pandey, Yixin Xiao, Maddaka Reddeppa, Yakshita Malhotra, Jiangnan Liu, Jungwook Min, Yuanpeng Wu, Zetian Mi
Summary: Efforts are being made to develop efficient micrometer-scale LEDs for future display technologies, but their efficiency remains lower than conventional broad-area devices. This study emphasizes the importance of p-doping in microLEDs for achieving high efficiency performance in nanostructure-based devices.
APPLIED PHYSICS LETTERS
(2023)
Article
Physics, Applied
Ding Wang, Ping Wang, Minming He, Jiangnan Liu, Shubham Mondal, Mingtao Hu, Danhao Wang, Yuanpeng Wu, Tao Ma, Zetian Mi
Summary: In this Letter, fully epitaxial ScAlN/AlGaN/GaN based ferroelectric high electron mobility transistors (HEMTs) were demonstrated using molecular beam epitaxy. The fabricated ferroelectric gate HEMTs showed counterclockwise hysteretic transfer curves with a wide threshold voltage tuning range, a large ON/OFF ratio, and reconfigurable output characteristics. The high quality ferroelectric gate stack and effective ferroelectric polarization coupling lead to improved subthreshold performance. These results provide fundamental insight into the ferroelectric polarization coupling and threshold tuning processes in ferroelectric nitride heterostructures and have promising applications in next-generation electronics.
APPLIED PHYSICS LETTERS
(2023)
Editorial Material
Materials Science, Multidisciplinary
Grace Xing, Zetian Mi, Srabanti Chowdhury
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
(2023)
Article
Chemistry, Physical
Danhao Wang, Ding Wang, Peng Zhou, Mingtao Hu, Jiangnan Liu, Shubham Mondal, Tao Ma, Ping Wang, Zetian Mi
Summary: Through high-resolution X-ray photoelectron spectroscopy measurements, we discovered a thick oxide layer on ScAlN when exposed to air, which significantly affects its characterization and electronic structure evaluation. By excluding the possible impact from the surface oxide layer, the band alignment of Sc0.18Al0.82N/GaN can be accurately determined. Simulation results further demonstrate that the Sc0.18Al0.82N barrier layer offers excellent charge carrier confinement and a high density of two-dimensional electron gas (2DEG) at the heterostructure interface, crucial for high-performance GaN-based high electron mobility transistors (HEMTs).
APPLIED SURFACE SCIENCE
(2023)
Article
Chemistry, Physical
Danhao Wang, Shubham Mondal, Pat Kezer, Mingtao Hu, Jiangnan Liu, Yuanpeng Wu, Peng Zhou, Tao Ma, Ping Wang, Ding Wang, John T. Heron, Zetian Mi
Summary: Incorporating scandium (Sc) into III-nitride lattice offers remarkable ferroelectric and optical properties. Yttrium (Y), a substitute for Sc, shows potential in alloyed III-nitride materials. In this study, we investigated the energy band gap alignment and transport properties of a YAlN-based HEMT structure. Experimental results showed promising electrical characteristics and compatibility with semiconductor technology, making it a significant development in next-generation HEMTs.
APPLIED SURFACE SCIENCE
(2023)
Article
Engineering, Electrical & Electronic
Samadrita Das, Trupti Ranjan Lenka, Fazal Ahmed Talukdar, Hieu Pham Trung Nguyen, Giovanni Crupi
Summary: In this paper, an electron blocking layer (EBL) free light emitting diode (LED) nanowire with prestrained layers has been proposed. The prestrained layers of InxGa1-xN/GaN are inserted between the GaN/InGaN multi-quantum wells (MQWs) and n-GaN layer to enhance the luminescence of the LED nanowires. The efficiency of the LED nanowire with prestrained layer has been improved by approximately 2.897% compared to the conventional one, due to the reduction of polarization field in the active region. The LED with 15% indium in the prestrained layer achieves a maximum efficiency of 85.21% with a minimum efficiency droop of 3.848% at 40 mA injected current. The proposed III-nitride LED nanostructure allows for superior optical power across the output spectral range.
INTERNATIONAL JOURNAL OF NUMERICAL MODELLING-ELECTRONIC NETWORKS DEVICES AND FIELDS
(2023)
Article
Chemistry, Analytical
Samadrita Das, Trupti Ranjan Lenka, Fazal Ahmed Talukdar, Hieu Pham Trung Nguyen, Giovanni Crupi
Summary: In this study, a novel structure of AlGaN UV LED with polarization-engineered heart-shaped AlGaN quantum barriers was proposed to address the issue of electron leakage. By decreasing the downward band bending and flattening the electrostatic field, significant improvements in electroluminescence, optical output power, and efficiency were achieved. This new EBL-free AlGaN LED shows great potential in enhancing optical power and producing highly efficient UV emitters.
