Article
Engineering, Electrical & Electronic
D. A. Veselov, Yu K. Bobretsova, A. A. Klimov, K. Bakhvalov, S. O. Slipchenko, N. A. Pikhtin
Summary: The comparative studies of high-power AlGaAs/InGaAs/GaAs semiconductor lasers with different waveguide designs showed that lasers with AlGaAs waveguides have higher temperature stability and optical power compared to those with GaAs waveguides.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
(2021)
Article
Engineering, Electrical & Electronic
Bangguo Wang, Shaoyang Tan, Li Zhou, Zhicheng Zhang, Yao Xiao, Wuling Liu, Yudan Gou, Guoliang Deng, Jun Wang
Summary: In this study, a structure based on InGaAsP/InGaP was optimized to improve the efficiency of 808nm laser diodes. Facet passivation was also employed to enhance the protection level. The fabricated laser diodes demonstrated excellent performance under high power and high temperature conditions.
IEEE PHOTONICS TECHNOLOGY LETTERS
(2022)
Article
Chemistry, Multidisciplinary
Qi Yang, Jicheng Zhang, Xuemin Wang, Zhiqiang Zhan, Tao Jiang, Jia Li, Ruijiao Zou, Keyu Li, Fengwei Chen, Weidong Wu
Summary: This work presents a dual ridge terahertz quantum cascade laser lasing at 3.1 THz and analyzes its performance in detail. The experimental results provide a reference for realizing high-power terahertz quantum cascade lasers and offer guidance for the structural design of multiple ridges or laser arrays.
Article
Engineering, Electrical & Electronic
Chun-Yu Cho, Yung-Fu Chen
Summary: An efficient CW mid-infrared laser with a tunable wavelength range from 3 to 4.5 μm is achieved using an intracavity optical parametric oscillator (ICOPO). The self-modulation effect caused by Nd-doped gain medium is eliminated by using an optically pumped semiconductor laser (OPSL) as the pumped laser gain medium. The mode hopping issue is addressed by using the flip-chip packaging method for the OPSL gain chip. The experimental results confirm the true CW and mode-hop-free quality of the laser.
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
(2022)
Article
Optics
Andres Remis, Laura Monge-Bartolome, Michele Paparella, Audrey Gilbert, Guilhem Boissier, Marco Grande, Alan Blake, Liam O'Faolain, Laurent Cerutti, Jean-Baptiste Rodriguez, Eric Tournie
Summary: Silicon photonics is a key technology in many fields, enabled by mature Si process technology, large silicon wafer size, and promising Si optical properties. However, monolithic integration of III-V lasers and Si photonic devices on the same Si substrate has been a challenge. In this study, we demonstrate the first semiconductor laser grown on a patterned Si photonics platform with light coupled into a waveguide. This work lays an important foundation for future low-cost, large-scale, fully integrated photonic chips.
LIGHT-SCIENCE & APPLICATIONS
(2023)
Article
Physics, Applied
Jianzhuo Liu, Mingchu Tang, Huiwen Deng, Samuel Shutts, Lingfang Wang, Peter M. Smowton, Chaoyuan Jin, Siming Chen, Alywn Seeds, Huiyun Liu
Summary: InAs/GaAs quantum-dot (QD) lasers offer a promising method for Si-based on-chip light sources. However, the integration of III-V materials on Si introduces a high density of threading dislocations (TDs), which limits the lifetime of the laser device. In this study, a kinetic model was proposed to simulate the degradation process caused by TDs in the early stage of laser operation. By using a rate equation model, the current density in the wetting layer, where the TDs concentrate, was calculated. The rate of degradation of QD lasers with different cavity lengths and quantum-well lasers directly grown on Si substrates was compared by varying the fitting parameters in the calculation of current densities in the kinetic model.
JOURNAL OF PHYSICS D-APPLIED PHYSICS
(2022)
Article
Optics
Zhongliang Qiao, Xiang Li, Jia XuBrian Sia, WanJun Wang, Hong Wang, Lin Li, Zaijin Li, Zhibin Zhao, Guojun Liu, Hao Chen, Yi Qu, Xin Gao, Baoxue Bo, Chongyang Liu
Summary: This study utilizes double quantum wells passively mode locked lasers to achieve subpicosecond pulse generation, finding that operational parameters have significant effects on the mode-locking characteristics of the laser, especially temperature causing an increase in pulse width. This has important implications for improving the performance of the laser.
OPTICS AND LASER TECHNOLOGY
(2022)
Article
Chemistry, Multidisciplinary
Thomas Kanne, Dags Olsteins, Mikelis Marnauza, Alexandros Vekris, Juan Carlos Estrada Saldana, Sara Loric, Rasmus D. Schlosser, Daniel Ross, Szabolcs Csonka, Kasper Grove-Rasmussen, Jesper Nygard
Summary: The core platform of several recent quantum device proposals relies on parallel 1D semiconductor channels connected by a superconducting strip, utilizing Andreev processes or topological effects. A strategy for synthesizing double InAs nanowires using III-V molecular beam epitaxy is presented, allowing for the deposition of a superconducting layer onto nanowires without breaking the vacuum in order to ensure pristine interfaces between the superconductor and the semiconductor nanowires. The method demonstrates the utility of high yield merged or separate parallel nanowires with full or half-shell superconductor coatings in complex quantum devices through electron transport measurements.
ADVANCED FUNCTIONAL MATERIALS
(2022)
Article
Physics, Applied
Zhuo-Fei Fan, Yu Deng, Chao Ning, Shu-Man Liu, Cheng Wang
Summary: This study investigates the differential gain and gain compression factor of an interband cascade laser through small-signal modulation response analysis. The results show that the ICL has a comparable differential gain to typical quantum well lasers and a significantly higher gain compression factor. Additionally, the ICL is found to be overdamped due to the strong gain compression effect, with a high K factor of 31.4 ns governed by the damping factor and resonance frequency.
APPLIED PHYSICS LETTERS
(2021)
Article
Optics
Janusz Mikolajczyk
Summary: This study presents a comparison of using quantum cascade lasers for free-space optical signal transmission, defining the capabilities of medium-wavelength infrared lasers in different operating modes and considering factors such as radiation attenuation in the atmosphere. The unique operational aspects and limitations of quantum cascade lasers for on-off keying modulation were determined through measurements, providing insights into signal behavior in data links.
Article
Computer Science, Information Systems
Zhongliang Qiao, Xiang Li, Jia Xubrian Sia, Wanjun Wang, Hong Wang, Lin Li, Zaijin Li, Zhibin Zhao, Yi Qu, Xin Gao, Baoxue Bo, Chongyang Liu
Summary: A monolithic two-section InGaAs/GaAs double quantum wells mode-locked laser emitting at 1.06 mu m demonstrates stable mode locking operation up to 80 degrees C, with a fundamental repetition rate of 9.51 GHz and a signal-to-noise ratio of more than 55 dB. The fourth harmonic at 38.04 GHz is also observed. Characteristic temperature (T-0) and the impact of absorber bias voltage on T-0 have been systematically studied, revealing a two-segment feature for T-0 and slight effects from absorber bias voltage on photon saturation.
Article
Optics
Xiuji Lin, Mingpo Chen, Qichen Feng, Shuaihao Ji, Shengwei Cui, Yao Zhu, Bo Xiao, Wensong Li, Huiying Xu, Zhiping Cai
Summary: High-power continuous-wave lasers at 639 nm were obtained by LD pumping on a lowly-doped Pr3+:YLF crystal, achieving output powers of 8.14 W for quasi-fundamental mode laser and 6.03 W for vortex lasers. The results provide theoretical guidance for designing high-power Laguerre-Gaussian lasers.
OPTICS AND LASER TECHNOLOGY
(2021)
Article
Engineering, Electrical & Electronic
Luke J. Mawst, Dan Botez
Summary: This paper reviews the design issues and performance limitations of mid-infrared quantum cascade lasers, with a focus on emission in the 3-6 μm wavelength range. Photon crystal structures with high built-in index contrast show the most promise for achieving high output powers.
IEEE PHOTONICS JOURNAL
(2022)
Article
Chemistry, Multidisciplinary
Xiaolong Liu, Kang Wang, Ang Ren, Tongjin Zhang, Shizhe Ren, Jiannian Yao, Haiyun Dong, Yong Sheng Zhao
Summary: A metal-linking approach is proposed to enhance the Raman gain of organic molecules, allowing for continuous-wave (c.w.) organic lasers. Broadband tunable Raman lasing is achieved by adjusting excitation wavelengths.
ANGEWANDTE CHEMIE-INTERNATIONAL EDITION
(2023)
Article
Chemistry, Multidisciplinary
Xiaolong Liu, Kang Wang, Ang Ren, Tongjin Zhang, Shizhe Ren, Jiannian Yao, Haiyun Dong, Yong Sheng Zhao
Summary: Stimulated Raman scattering offers an alternative strategy for continuous-wave (c.w.) organic lasers, but suffers from inadequate Raman gain in organic material systems. In this study, a metal-linking approach is proposed to enhance the Raman gain of organic molecules. Self-assembled microcrystals of metal-linked organic dimers exhibit large Raman gain, enabling c.w. Raman lasing. Broadband tunable Raman lasing is achieved in the organic dimer microcrystals by adjusting excitation wavelengths. The work contributes to the understanding of Raman gain in organic molecules and provides a pathway for designing c.w. organic lasers.
ANGEWANDTE CHEMIE-INTERNATIONAL EDITION
(2023)
